Method of fabricating semiconductor device

ABSTRACT

A method of fabricating a semiconductor device is provided. The method includes forming semiconductor patterns on a semiconductor substrate, such that sides are surrounded by a lower interlayer insulating layer. A lower insulating layer is formed that covers the semiconductor patterns and the lower interlayer insulating layer. A contact structure is formed that penetrates the lower insulating layer and the lower interlayer insulating layer and is spaced apart from the semiconductor patterns. The contact structure has an upper surface higher than the semiconductor patterns. An upper insulating layer is formed covering the contact structure and the lower insulating layer. The upper and lower insulating layers form insulating patterns exposing the semiconductor patterns and covering the contact structure, and each of the insulating patterns includes a lower insulating pattern and an upper insulating pattern sequentially stacked. After the insulating patterns are formed, metal-semiconductor compounds are formed on the exposed semiconductor patterns.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. application Ser.No. 13/867,378, filed on Apr. 22, 2013, which claims priority under 35U.S.C. §119 to Korean Patent Application No. 10-2012-0042168 filed onApr. 23, 2012, the disclosure of each of which is hereby incorporated byreference in its entirety.

BACKGROUND

1. Field

Example embodiments of inventive concepts relate to a semiconductordevice having a contact structure and a metal-semiconductor compound, amethod of fabricating the same, and an electronic device and electronicsystem employing the same.

2. Description of Related Art

With high integration of semiconductor devices, unexpected problemsoccur due to reducing the dimensions of components constituting thesemiconductor devices.

SUMMARY

Some example embodiments of inventive concepts provide a semiconductordevice capable of preventing agglomerations of a metal-semiconductorcompound such as silicide, and a method of fabricating the same.

Other example embodiments of inventive concepts provide a semiconductordevice having a metal-semiconductor compound and a contact structure,and a method of fabricating the same.

Other example embodiments of inventive concepts provide a semiconductordevice including a semiconductor pattern and a contact structure havingupper surfaces with different heights, and a method of fabricating thesame.

Other example embodiments of inventive concepts provide a semiconductordevice capable of improving process margin, and a method of fabricatingthe same.

Other example embodiments of inventive concepts provide an electronicdevice and electronic system having the above-described semiconductordevices.

Example embodiments of inventive concepts should not be limited by theabove description, and other unmentioned aspects will be clearlyunderstood by one of ordinary skill in the art from example embodimentsdescribed herein.

In accordance with some example embodiments of inventive concepts, amethod of fabricating a semiconductor device is provided. The method mayinclude forming semiconductor patterns on a semiconductor substrate,such that sides of the semiconductor patterns are surrounded by a lowerinterlayer insulating layer. A lower insulating layer may be formed thatcovers the semiconductor patterns and the lower interlayer insulatinglayer. A contact structure may be formed that penetrates the lowerinsulating layer and the lower interlayer insulating layer and is spacedapart from the semiconductor patterns. The contact structure may have anupper surface higher than the semiconductor patterns. An upperinsulating layer may be formed that covers the contact structure and thelower insulating layer. The upper and lower insulating layers may bepatterned to form insulating patterns that expose the semiconductorpatterns and cover the contact structure, and each of the insulatingpatterns includes a lower insulating pattern and an upper insulatingpattern sequentially stacked. After forming the insulating patterns,metal-semiconductor compounds may be formed on the exposed semiconductorpatterns.

In some example embodiments, before forming the contact structure, themethod may further include forming a contact hole that penetrates thelower insulating layer and the lower interlayer insulating layer andexposes the semiconductor substrate, and forming an impurity region inthe semiconductor substrate exposed by the contact hole.

In other example embodiments, the insulating patterns may include firstinsulating patterns between the semiconductor patterns, and a secondinsulating pattern on the contact structure. A distance between thefirst insulating patterns may be greater than a distance between thesemiconductor patterns.

In another example embodiment, the method may further include forminglower electrodes on the metal-semiconductor compounds, and forming datastorage patterns on the lower electrodes.

The method may further include forming an upper interlayer insulatinglayer on the semiconductor substrate having the data storage patterns,forming a first groove and a second groove, the first groove penetratingthe upper interlayer insulating layer and having a portion overlappingthe data storage patterns, and a second groove penetrating the upperinterlayer insulating layer and the upper insulating pattern and havinga portion overlapping the contact structure, and forming a firstconductive pattern in the first groove, and a second conductive patternin the second groove.

A lower surface of the second conductive pattern may be lower than alower surface of the first conductive pattern.

The first conductive pattern may be formed in a line shape.

The method may further include forming upper electrodes on the datastorage patterns before forming the upper interlayer insulating layer,and the upper electrodes may be electrically connected to the datastorage patterns and the first conductive structure.

In accordance with some example embodiments of inventive concepts, amethod of fabricating a semiconductor device is provided. The method mayinclude forming semiconductor patterns on a semiconductor substrate,such that sides of the semiconductor patterns are surrounded by a lowerinterlayer insulating layer. A lower insulating layer, that covers thesemiconductor patterns and the lower interlayer insulating layer, may beformed. A contact structure, that penetrates the lower insulating layerand the lower interlayer insulating layer and is spaced apart from thesemiconductor patterns, may be formed. An upper insulating layer, thatcovers the contact structure and the lower insulating layer, may beformed. The upper and lower insulating layers may be patterned to forminsulating patterns that expose the semiconductor patterns and cover thecontact structure, and each of the insulating patterns includes a firstinsulating pattern between the semiconductor patterns and a secondinsulating pattern on the contact structure. The first insulatingpattern may include a first lower insulating pattern and a first upperinsulating pattern sequentially stacked, and the second insulatingpattern may include a second lower insulating pattern and a second upperinsulating pattern sequentially stacked. After forming the insulatingpatterns, metal-semiconductor compounds may be formed on the exposedsemiconductor patterns. Lower electrodes may be formed on themetal-semiconductor compounds. Data storage patterns may be formed onthe lower electrodes.

In some example embodiments, the second lower insulating pattern may beon sides of the contact structure, and the second upper insulatingpattern may cover an upper surface of the contact structure and an uppersurface of the second lower insulating pattern.

In other example embodiments, the method may further include forming anupper interlayer insulating layer on the semiconductor substrate havingthe data storage patterns, forming a first groove and a second groove,the first groove penetrating the upper interlayer insulating layer andhaving a portion overlapping the data storage patterns, and the secondgroove penetrating the upper interlayer insulating layer and the secondupper insulating pattern and having a portion overlapping the contactstructure, and forming a first conductive pattern in the first groove,and a second conductive pattern in the second groove.

The method may further include forming upper electrodes on thesemiconductor substrate having the data storage patterns before formingthe upper interlayer insulating layer, and the upper electrodes may beelectrically connected to the data storage patterns and the firstconductive structure.

In other example embodiments, forming the lower electrodes and the datastorage patterns may include after the forming metal-semiconductorcompounds, forming first spacers on sides of the insulating patterns,sequentially forming a lower electrode layer and a spacer layer on thesubstrate having the first spacers, anisotropically etching the lowerelectrode layer and the spacer layer to form lower electrode lines andsecond spacers, forming an insulating separation layer on the substratehaving the lower electrode lines and the second spacers, planarizing thefirst separation layer to form a first separation pattern until thefirst and second insulating patterns are exposed, forming a trench forcutting the lower electrode lines to form lower electrode patternsdisposed on the metal-semiconductor compounds, forming an insulatingsecond separation pattern filling the trench, partially etching thelower electrode patterns to form holes and the lower electrodes, andforming the data storage patterns in the holes.

In other example embodiments, forming the lower electrodes and the datastorage patterns may include sequentially forming a lower electrodelayer and a spacer layer on the substrate including themetal-semiconductor compounds, anisotropically etching the lowerelectrode layer and the spacer layer to form lower electrode lines andspacers, forming an insulating first separation layer on the substratehaving the lower electrode lines and the spacers, planarizing the firstseparation layer to form a first separation pattern until the first andsecond insulating patterns are exposed, forming a trench for cutting thelower electrode lines to form lower electrode patterns disposed on themetal-semiconductor compounds, forming an insulating second separationpattern filling the trench, partially etching the lower electrodepatterns to form empty spaces and to form the lower electrodes, andforming the data storage patterns in the empty spacers.

In another example embodiment, a portion of an upper surface of each ofthe semiconductor patterns may be covered with the first insulatingpattern, and a remaining portion thereof may be covered with acorresponding metal-semiconductor compound.

In another example embodiment, the first and second upper insulatingpatterns may have a vertical thickness smaller than that of the firstand second lower insulating patterns.

According to some example embodiments, a method of fabricating asemiconductor device includes forming semiconductor patterns at regularintervals on a semiconductor substrate, such that spaces between thesemiconductor patterns are filled with a lower interlayer insulatinglayer; forming a lower insulating layer covering the semiconductorpatterns and the lower interlayer insulating layer; removing a portionof the lower insulating layer and the lower interlayer insulating layer;forming a contact structure where the portion of the lower insulatinglayer and the lower interlay insulating layer was removed, an uppersurface of the contact structure being higher than the semiconductorpattern; forming an upper insulating layer that covers the contactstructure and the lower insulating layer; selectively removing the upperand lower insulating layers to expose the semiconductor patterns withoutexposing the contact structure; and forming metal-semiconductorcompounds on the exposed semiconductor patterns after removing the upperand lower insulating layers.

The method may further include forming a contact hole, before formingthe contact structure, the contact hole penetrating the lower insulatinglayer and the lower interlayer insulating layer and exposing thesemiconductor substrate; and forming an impurity region in thesemiconductor substrate exposed by the contact hole before forming thecontact structure.

The selectively removing the upper and lower insulating layers may formfirst insulating patterns formed between the semiconductor patterns, anda second insulating pattern formed on the contact structure, and adistance spaced between the first insulating patterns is greater than adistance spaced between the semiconductor patterns.

Details of other example embodiments are included in the detaileddescription and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of example embodimentsof inventive concepts will be apparent from the description of someexample embodiments of inventive concepts, as illustrated in theaccompanying drawings in which like reference characters refer to thesame parts throughout the different views. The drawings are notnecessarily to scale, emphasis instead being placed upon illustratingthe principles of example embodiments of inventive concepts. In thedrawings:

FIG. 1 is a plan view illustrating a semiconductor device according tosome example embodiments of inventive concepts;

FIG. 2 is a cross-sectional view illustrating a semiconductor deviceaccording to an example embodiment of inventive concepts;

FIG. 3 is a cross-sectional view illustrating a semiconductor deviceaccording to an example embodiment of inventive concepts;

FIG. 4 is a cross-sectional view illustrating a semiconductor deviceaccording to another example embodiment of inventive concepts;

FIG. 5 is a cross-sectional view illustrating a semiconductor deviceaccording to another example embodiment of inventive concepts;

FIG. 6 is a process sequence diagram illustrating a method offabricating a semiconductor device according to an example embodiment ofinventive concepts;

FIG. 7A is a process sequence diagram illustrating a method offabricating a semiconductor device according to an example embodiment ofinventive concepts;

FIG. 7B is a process sequence diagram illustrating a method offabricating a semiconductor device according to another exampleembodiment of inventive concepts;

FIG. 7C is a process sequence diagram illustrating a method offabricating a semiconductor device according to another exampleembodiment of inventive concepts;

FIG. 8A is a process sequence diagram illustrating a method offabricating a semiconductor device according to another exampleembodiment of inventive concepts;

FIG. 8B is a process sequence diagram illustrating a method offabricating a semiconductor device according to another exampleembodiment of inventive concepts;

FIGS. 9A to 9W are cross-sectional views illustrating a method offabricating a semiconductor device according to an example embodiment ofinventive concepts;

FIGS. 10A to 10C are cross-sectional views illustrating a method offabricating a semiconductor device according to an example embodiment ofinventive concepts;

FIGS. 11A to 11I are cross-sectional views illustrating a method offabricating a semiconductor device according to another exampleembodiment of inventive concepts;

FIGS. 12A and 12B are cross-sectional views illustrating a method offabricating a semiconductor device according to another exampleembodiment of inventive concepts;

FIG. 13 is a schematic view illustrating a memory card according to someexample embodiments of inventive concepts;

FIG. 14 is a block diagram illustrating an electronic system accordingto some example embodiments of inventive concepts;

FIG. 15 is a block diagram illustrating a data storage device accordingto some example embodiments of inventive concepts; and

FIG. 16 is a block diagram illustrating an electronic device accordingto some example embodiments of inventive concepts.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Various example embodiments will now be described more fully withreference to the accompanying drawings in which some example embodimentsare shown. Example embodiments of inventive concepts may, however, beembodied in different forms and should not be construed as limited tothe example embodiments set forth herein. Rather, these exampleembodiments are provided so that this disclosure is thorough andcomplete and fully conveys the scope of example embodiments of inventiveconcepts to one skilled in the art. In the drawings, the thicknesses oflayers and regions may be exaggerated for clarity. It will also beunderstood that when a layer is referred to as being “on” another layeror substrate, it can be directly on the other layer or substrate orintervening layers may also be present. Like numbers refer to likeelements throughout.

Example embodiments are described herein with reference tocross-sectional illustrations, plane illustrations, and blockillustrations that are schematic illustrations of example embodiments(and intermediate structures). As such, variations from the shapes ofthe illustrations as a result, for example, of manufacturing techniquesand/or tolerances, may be expected. Thus, example embodiments should notbe construed as limited to the particular shape illustrated herein butmay include deviations in shapes that result, for example, frommanufacturing. Thus, the regions illustrated in the figures areschematic in nature and their shapes do not necessarily illustrate theactual shape of a region of a device and do not limit the scope.

In the drawings, the thicknesses of layers and regions may beexaggerated for clarity. It is also understood that when a layer isreferred to as being “on” another layer or substrate, it can be directlyon the other or substrate, or intervening layers may also be present.Like reference numerals in the drawings denote like elements.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, these elements, components, regions, layers and/orsections should not be limited by these terms. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the present invention.

Spatially relative terms, such as “top end”, “bottom end”, “topsurface”, “bottom surface”, “upper”, and “lower”, and the like, may beused herein for ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. It will be understood that the spatially relative terms areintended to encompass different orientations of the device in use oroperation in addition to the orientation depicted in the figures. Forexample, if the device in the figures is turned over, elements describedas “below” or “beneath” other elements or features would then beoriented “above” the other elements or features. Thus, the example term“below” can encompass both an orientation of above and below. The devicemay be otherwise oriented (rotated 90 degrees or at other orientations)and the spatially relative descriptors used herein interpretedaccordingly.

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limiting of theinvention. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“includes,” “including,” “comprises” and/or “comprising,” when used inthis specification, specify the presence of stated features, integers,steps, operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andthis specification and will not be interpreted in an idealized or overlyformal sense unless expressly so defined herein.

FIG. 1 is a plan view illustrating a semiconductor device according tosome example embodiments of inventive concepts. FIG. 2 is across-sectional view illustrating a semiconductor device according to anexample embodiment of inventive concepts, and FIGS. 3 to 5 arecross-sectional views illustrating semiconductor devices according someexample embodiments of inventive concepts. In FIG. 1, a portionindicated by “CR” denotes a cell array area, and a portion indicated by“PR” denotes a peripheral circuit area. In FIGS. 2 to 5, a portionindicated by “C1” shows a region taken along line I-I′ of FIG. 1, aportion indicated by “C2” shows a region taken along line II-II′, and aportion indicated by “P” shows a region taken along line III-III′ ofFIG. 1.

First, a semiconductor device according to an example embodiment ofinventive concepts will be described with reference to FIGS. 1 and 2.

Referring to FIGS. 1 and 2, a substrate 1 may be prepared. The substrate1 may be a semiconductor substrate. The substrate 1 may be a siliconsubstrate. The substrate 1 may include a cell array area CR and aperipheral circuit area PR.

A device isolation region 3 s defining cell active regions 3 c and aperipheral active region 3 p may be provided in the substrate 1. Thedevice isolation region 3 s may be formed with a shallow trenchisolation. The cell active regions 3 c may be provided in the cell arrayarea CR, and the peripheral active region 3 p may be provided in theperipheral circuit area PR.

Word lines 12 may be provided in the cell active regions 3 c. The wordlines 12 may be formed by implanting impurities in the cell activeregions 3 c and may include impurity regions having a differentconductivity from the cell active regions 3 c. For example, the wordlines 12 may have an N-type conductivity and the cell active regions 3 cmay have a P-type conductivity.

A transistor TR may be formed in the peripheral circuit area PR. Thetransistor TR may include a gate structure 9 formed on the peripheralactive region 3 p, and source/drain regions 11 formed in the peripheralactive region 3 p at both sides of the gate structure 9.

The gate structure 9 may include a gate dielectric 5, a gate electrode6, and an insulating gate capping pattern 7 sequentially stacked. Thegate structure 9 may further include insulating gate spacers 8 formed onsides of the gate electrode 6 and the gate capping pattern 7.

A lower interlayer insulating layer ILD1 may be provided on thesubstrate having the word lines 12 and the transistor TR. The lowerinterlayer insulating layer ILD1 may be formed of silicon oxide or low-kdielectric. The low-k dielectric may be dielectric having a lowerdielectric constant than silicon oxide.

Semiconductor patterns 24 may be provided that penetrate the lowerinterlayer insulating layer ILD1 and are electrically connected to theword lines 12. The semiconductor patterns 24 may be formed ofcrystalline silicon. Sides of the semiconductor patterns 24 may besurrounded by the lower interlayer insulating layer ILD1.

A PN diode may be formed in each of the semiconductor patterns 24. Forexample, each of the semiconductor patterns 24 may include a lowersemiconductor region 24L and an upper semiconductor region 24U. Theupper semiconductor region 24U may have a P-type conductivity and thelower semiconductor region 24L may have an N-type conductivity.Therefore, the upper semiconductor region 24U and the lowersemiconductor region 24L may form a PN diode.

Metal-semiconductor compounds 57 may be provided on the semiconductorpatterns 24. The metal-semiconductor compounds 57 may be formed of metalsilicide. For example, the metal-semiconductor compounds 57 may includeany material selected from the group consisting of a cobalt-silicon(Co—Si) compound, a titanium-silicon (Ti—Si) compound, atantalum-silicon (Ta—Si) compound, a tungsten-silicon (W—Si) compound,and a nickel-silicon (Ni—Si) compound.

Lower electrodes 63 c and data storage patterns 78 that are sequentiallystacked may be provided on the metal-semiconductor compounds 57. Each ofthe lower electrodes 63 c may be formed in an L shape. For example, eachof the lower electrodes 63 c may include a first portion in directcontact with a corresponding metal-semiconductor compound 57, and asecond portion protruding upward from a portion of the first portion.Each of the data storage patterns 78 may be in contact with an upper endportion of each of the lower electrodes 63 c.

The data storage patterns 78 may be formed of a material for storinginformation of a phase-change memory device. For example, the datastorage patterns 78 may be formed of a phase-changeable material havingan amorphous phase with high resistivity and a crystalline phase withlow resistivity according to heating temperature and heating time. Forexample, the data storage patterns may be formed of a material includinga chalcogenide compound, such as germanium-antimony-tellurium (GeSbTe),germanium-tellurium-arsenic (GeTeAs), tin-tellurium-tin (SnTeSn),germanium-tellurium (GeTe), antimony-tellurium (SbTe),selenium-tellurium-tin (SeTeSn), germanium-tellurium-selenium (GeTeSe),antimony-selenium-bismuth (SbSeBi), germanium-bismuth-tellurium(GeBiTe), germanium-tellurium-titanium (GeTeTi), induium-selenium(InSe), gallium-tellurium-selenium (GaTeSe), orindium-antimony-tellurium (InSbTe). Alternatively, the data storagepattern 78 may be formed of a material in which any element selectedfrom the group consisting of carbon (C), nitrogen (N), silicon (Si), andoxygen (O) is contained in any material selected from the groupconsisting of a GeSbTe layer, a GeTeAs layer, an SnTeSn layer, a GeTelayer, an SbTe layer, an SeTeSn layer, a GeTeSe layer, an SbSeBi layer,a GeBiTe layer, a GeTeTi layer, an InSe layer, a GaTeSe layer, and anInSbTe layer.

The lower electrodes 63 c may be formed of a material capable of servingas a heater to heat the data storage patterns 78. For example, the lowerelectrode 63 c may include any material selected from the groupconsisting of titanium nitride (TiN), titanium aluminum nitride (TiAlN),tantalum nitride (TaN), tungsten nitride (TW), molybdenum nitride (MoN),niobium nitride (NbN), titanium silicon nitride (TiSiN), titanium boronnitride (TiBN), zirconium silicon nitride (ZrSiN), tungsten siliconnitride (WSiN), tungsten boron nitride (WBN), zirconium aluminum nitride(ZrAlN), molybdenum aluminum nitride (MoAlN), tantalum silicon nitride(TaSiN), tantalum aluminum nitride (TaAlN), tungsten (TiW), titaniumaluminum (TiAl), titanium oxynitride (TiON), titanium aluminumoxynitride (TiAlON), tungsten oxynitride (WON), and tantalum oxynitride(TaON).

The sequentially stacked lower electrodes 63 c and data storage patterns78 may have a first side Si and a second side S2 facing each other, andfurther have a third side S3 and a fourth side S4 facing each other. Thefirst and second sides S1 and S2 may be parallel to each other, and thethird and fourth sides S3 and S4 may be parallel to each other. Inaddition, the first and second sides S1 and S2 may be parallel to afirst direction, and the third and fourth sides S3 and S4 may beparallel to a second direction crossing the first direction. Forexample, the first direction may be perpendicular to the seconddirection. The third and fourth sides S3 and S4 may be perpendicular tothe first and second sides S1 and S2.

The first to fourth sides S1 to S4 of the sequentially stacked lowerelectrodes 63 s and data storage patterns 78 may be surrounded by firstinsulating patterns 54 c, first separation patterns 69 a, and secondseparation patterns 72. A first lower electrode 63 c and a first datastorage pattern 78 sequentially stacked on a first semiconductor pattern24 of the semiconductor patterns 24 may be disposed between a pair ofsecond separation patterns 72 adjacent to each other and between thefirst insulating pattern 54 c and the first separation pattern 69 aadjacent to each other.

Each of the first insulating patterns 54 c may include stacked layers,each of the first separation patterns 69 a may be an insulating singlelayer, and each of the second separation patterns 72 may be aninsulating single layer. Each of the first insulating patterns 54 c mayinclude a first lower insulating pattern 39 c and a first upperinsulating pattern 51 c.

The first and second sides S1 and S2 of the sequentially stacked lowerelectrodes 63 c and data storage patterns 78 may be disposed between thefirst insulating pattern 54 c and the first separation pattern 69 aadjacent to each other. The first insulating patterns 54 c may be closerto the first sides S1 of the sequentially stacked lower electrodes 63 cand data storage patterns 78 than the second sides S2 thereof. The firstseparation patterns 69 a may be closer to the second sides S2 of thesequentially stacked lower electrodes 63 c and data storage patterns 78than the first sides S1 thereof.

The third and fourth sides S3 and S4 of the sequentially stacked lowerelectrodes 63 c and data storage patterns 78 may be disposed between thesecond separation patterns 72 adjacent to each other.

Insulating first spacers 60 may be interposed between the first sides S1of the sequentially stacked lower electrodes 63 c and the data storagepatterns 78 and the first insulating patterns 54 c.

Insulating second spacers 66 a may be interposed between the secondsides S2 of the sequentially stacked lower electrodes 63 c and datastorage patterns 78 and the first separation patterns 69 a.

Each of the lower electrodes 63 c may include the second portioninterposed between the first spacer 60 and the second spacer 66 a, andthe first portion interposed between the second spacer 66 a and themetal-semiconductor compound 57.

A second insulating pattern 54 w and a peripheral insulating pattern 54p may be provided on the lower interlayer insulating layer ILD1. Thesecond insulating pattern 54 w and the peripheral insulating pattern 54p may include the same material as the first insulating patterns 54 cand be positioned at the same level as the first insulating patterns 54c.

Each of the first insulating patterns 54 c may include a sequentiallystacked first lower insulating pattern 39 c and upper insulating pattern51 c. The second insulating pattern 54 w may include a sequentiallystacked second lower insulating pattern 39 w and second upper insultingpattern 51 w. The peripheral insulating patterns 54 p may include asequentially stacked peripheral lower insulating pattern 39 p andperipheral upper insulating pattern 51 p.

Conductive word line contact structures 48 w may be provided thatpenetrate the second lower insulating pattern 39 w and the lowerinterlayer insulating layer ILD1 and are electrically connected to theword lines 12. Sides of the word line contact structures 48 w may besurrounded by the second lower insulating pattern 39 w and the lowerinterlayer insulating layer ILD1, and bottoms of the word line contactstructures 48 w may be electrically connected to end portions of theword lines 12. The second upper insulating pattern 51 w may be at alevel higher than the word line contact structures 48 w.

Conductive peripheral contact structures 48 p may be provided thatpenetrate the peripheral lower insulating pattern 39 p and the lowerinterlayer insulating layer ILD1 and are electrically connected to thesource/drain regions 11. Sides of the peripheral contact structures 48 pmay be surrounded by the peripheral lower insulating pattern 39 p andthe lower interlayer insulating layer ILD1. The peripheral upperinsulating pattern 51 p may be at a level higher than the peripheralcontact structures 48 p.

A conductive gate contact structure 48 g may be provided that penetratesthe peripheral lower insulating pattern 39 p, the lower interlayerinsulating layer ILD1 and the gate capping pattern 7 and is electricallyconnected to the gate electrode 6.

Sequentially stacked conductive upper electrodes 81 and insulating upperelectrode capping patterns 84 may be provided on the data storagepatterns 78. The upper electrodes 81 may be electrically connected tothe data storage patterns 78. An insulating etch stop layer 87 may beprovided on the substrate having the sequentially stacked upperelectrodes 81 and upper electrode capping patterns 84.

An upper interlayer insulating layer ILD2 may be formed on the etch stoplayer 87. The upper interlayer insulating layer ILD2 may be formed ofsilicon oxide and the etch stop layer 87 may be formed of siliconnitride.

First conductive structures 96 c may be provided that sequentiallypenetrate the upper interlayer insulating layer ILD2, the etch stoplayer 87 and the upper electrode capping patterns 84, and areelectrically connected to the upper electrodes 81. The first conductivestructures 96 c may have line shapes spaced apart from each other. Thefirst conductive structures 96 c may be formed in the line shapecrossing the word lines 12. The first conductive structures 96 c may bebit lines of a memory device. Each of the first conductive structures 96c may include a second conductive material layer 96 c_2 sequentiallypenetrating the upper interlayer insulating layer ILD2, the etch stoplayer 87, and the upper electrode capping pattern 84, and a firstconductive material layer 96 c_1 covering a side and a bottom of thesecond conductive material layer 96 c_2.

Second conductive structures 96 w may be provided that sequentiallypenetrate the upper interlayer insulating layer ILD2, the etch stoplayer 87, and the second upper insulating pattern 51 w and areelectrically connected to the word line contact structures 48 w. Thesecond conductive structures 96 w may include the same material as thefirst conductive structures 96 c. The second conductive structures 96 wmay have upper surfaces positioned at the same level as upper surfacesof the first conductive structures 96 c, and bottoms positioned at alower level than the bottoms of the first conductive structures 96 c.Each of the second conductive structures 96 w may include a secondconductive material layer 96 w_2 sequentially penetrating the upperinterlayer insulating layer ILD2, the etch stop layer 87, and the secondupper insulating pattern 51 w, and a first conductive material layer 96w_1 covering a side and a bottom of the second conductive material layer96 w_2.

Peripheral conductive structures 96 p may be provided that sequentiallypenetrate the upper interlayer insulating layer ILD2, the etch stoplayer 87, and the peripheral upper insulating pattern 51 p, and areelectrically connected to the peripheral contact structures 48 p. Theperipheral conductive structures 96 p may include the same material asthe second conductive structures 96 w and may be positioned at the samelevel as the second conductive structures 96 w. Each of the peripheralconductive structures 96 p may include a second conductive materiallayer 96 p_2 sequentially penetrating the upper interlayer insulatinglayer ILD2, the etch stop layer 87, and the peripheral upper insulatingpattern 51 p, and a first conductive material layer 96 p_1 covering aside and a bottom of the second conductive material layer 96 p_2.

A gate conductive structure 96 g may be provided that sequentiallypenetrates the upper interlayer insulating layer ILD2, the etch stoplayer 87, and the peripheral upper insulating pattern 51 p, and iselectrically connected to the gate contact structure 48 g. The gateconductive structure 96 g may include the same material as the secondconductive structures 96 w and may be positioned at the same level asthe second conductive structures 96 w.

The structures of the first conductive structures 96 c, which may beused as the bit lines and the upper electrodes 81 according to someexample embodiments of inventive concepts, are not limited to thestructures as described in FIG. 2. For example, some example embodimentsof inventive concepts may provide a structure of the upper electrodes 81and the first conductive structures 96 c to be formed simultaneously.The structure of the upper electrodes 81 and the bit lines 87 formedsimultaneously will be described now with reference to FIG. 3.

Referring to FIGS. 1 and 3, semiconductor patterns 24, of which sidesare surrounded by a lower interlayer insulating layer ILD1 and which areelectrically connected to word lines 12, may be provided on a substrate1 having the word lines 12 and a transistor TR as described in FIG. 2.Further, metal-semiconductor compounds 57 may be provided on thesemiconductor patterns 24, and sequentially stacked lower electrodes 63c and data storage patterns 78 may be provided on themetal-semiconductor compounds 57. The sequentially stacked lowerelectrodes 63 c and data storage patterns 78 may have first to fourthsides S1 to S4 as described in FIG. 2. The first and second sides S1 andS2 may face each other and be parallel to each other, and the third andfourth sides S3 and S4 may face each other and be parallel to eachother. The third and fourth sides S3 and S4 may be perpendicular to thefirst and second sides S1 and S2.

The first to fourth sides S1 to S4 of the sequentially stacked lowerelectrodes 63 c and data storage patterns 78 may be surrounded by firstinsulating patterns 54 c′, first separation patterns 69 a, and secondseparation patterns 72.

The first and second sides S1 and S2 of the sequentially stacked lowerelectrodes 63 c and data storage patterns 78 may be disposed between thefirst insulating patterns 54 c′ and the first separation patterns 69adjacent to each other. The first insulating patterns 54 c′ may becloser to the first sides S1 of the sequentially stacked lowerelectrodes 63 c and data storage patterns 78 than the second sides S2thereof. The first separation patterns 69 may be closer to the secondsides S2 of the sequentially stacked lower electrodes 63 c and datastorage patterns 78 than the first sides S1 thereof. The third andfourth sides S3 and S4 of the sequentially stacked lower electrodes 63 cand data storage patterns 78 may be disposed between the secondseparation patterns 72 adjacent to each other.

Insulating first spacers 60 may be interposed between the first sides S1of the sequentially stacked lower electrodes 63 c and data storagepatterns 78 and the first insulating patterns 54 c′. Insulating secondspacers 66 a may be interposed between the second sides S2 of thesequentially stacked lower electrodes 63 c and data storage patterns 78and the first separation patterns 69 a.

Each of the lower electrodes 63 c may include a first portion interposedbetween the first spacer 60 and the second spacer 66 a, and a secondportion interposed between the second spacer 66 a and themetal-semiconductor compound 57.

A second insulating pattern 54 w′ and a peripheral insulating pattern 54p′ may be provided on the lower interlayer insulating layer ILD1. Thesecond insulating pattern 54 w′ and the peripheral insulating pattern 54p′ may include the same material as the first insulating patterns 54 c′and be positioned at the same level as the first insulating pattern 54c′.

Each of the first insulating patterns 54 c′ may include a sequentiallystacked first lower insulating pattern 39′ and first upper insulatingpattern 51 c′. The second insulating pattern 54 w′ may include asequentially stacked second lower insulating pattern 39 w′ and secondupper insulating pattern 51 w′. The peripheral insulating pattern 54 p′may include a sequentially stacked peripheral lower insulating pattern39 p′ and peripheral upper insulating pattern 51 p′.

The first lower insulating pattern 39 c′ may have a thickness differentfrom the first upper insulating pattern 51 c′. The first lowerinsulating pattern 39 c′ may have a vertical thickness greater than thefirst upper insulating pattern 51 c′. For example, the first lowerinsulating pattern 39 c′ may have a first vertical thickness T1, and thefirst upper insulating pattern 51 c′ may have a second verticalthickness T2 smaller than the first vertical thickness. The firstvertical thickness T1 may be a distance between an upper surface and alower surface of the first lower insulating pattern 39 c′, and thesecond vertical thickness T2 may be a distance between an upper surfaceand a lower surface of the first upper insulating pattern 51 c′.

The second lower insulating pattern 39 w′ and the peripheral lowerinsulating pattern 39 p′ may have the same first vertical thickness T1as the first lower insulating pattern 39 c′. The second upper insulatingpattern 51 w′ and the peripheral upper insulating pattern 51 p′ may havethe same second vertical thickness T2, which is smaller than the firstvertical thickness T1, as the first upper insulating pattern 51 c′.

Conductive word line contact structures 48 w may be provided thatpenetrates the second lower insulating pattern 39 w′ and the lowerinterlayer insulating layer ILD1 and are electrically connected to theword lines 12. Conductive peripheral contact structures 48 p may beprovided that penetrate the peripheral lower insulating pattern 39 p′and the lower interlayer insulating layer ILD1 and are electricallyconnected to source/drain regions 11. A conductive gate contactstructure 48 g may be provided that sequentially penetrates theperipheral lower insulating pattern 39 p′, the lower interlayerinsulating layer ILD1 and a gate capping pattern 7, and is electricallyconnected to the gate electrode 6.

An upper interlayer insulating layer ILD2 may be provided on thesubstrate including the first insulating patterns 54 c′, the secondinsulating pattern 54 w′, the peripheral insulating pattern 54 p′, thedata storage patterns 78, the first separation patterns 69 a, the secondseparation patterns 72, the first spacers 60, and the second spacers 66a.

First grooves 194 c may be provided that penetrate the upper interlayerinsulating layer ILD2 and expose the data storage patterns 78. Firstconductive patterns 196 c filling the first grooves 194 c may beprovided. Each of the first conductive patterns 196 c may include afirst conductive material layer 196 c_1 covering an inner surface ofeach of the first grooves 194 c, and a second conductive material layer196 c_2 formed on the first conductive material layer 196 c_1 to befilled within each of the first grooves 194 c. The first conductivepatterns 196 c may have line shapes to be spaced apart from each other.The first conductive patterns 196 c may be used as bit lines of a memorydevice and the first conductive material layers 196 c_1 of the firstconductive patterns 196 c may serve as upper electrodes of the memorydevice. Therefore, the first conductive patterns 196 c may include theupper electrodes 196 c-1 and the bit lines 196 c_2 of the memory device.

Second grooves 194 w may be provided that sequentially penetrate theupper interlayer insulating layer ILD2 and the second upper insulatingpattern 51 w′ and expose the word line contact structures 48 w. Secondconductive patterns 196 w filling the second grooves 194 w may beprovided. Each of the second conductive patterns 196 w may include afirst conductive material layer 196 w_1 formed on an inner surface ofeach of the second grooves 194 w, and a second conductive material layer196 w_2 formed on the first conductive material layer 196 w_1 to befilled within each of the second grooves 194 w.

Peripheral grooves 194 p may be provided that sequentially penetrate theupper interlayer insulating layer ILD2 and the peripheral upperinsulating pattern 51 p′ and expose the peripheral contact structures 48p. Peripheral conductive patterns 196 p filling the peripheral grooves194 p may be provided. Each of the peripheral conductive patterns 196 pmay include a first conductive material layer 196 p_1 formed on an innersurface of the peripheral grooves 194 p, and a second conductivematerial layer 196 p_2 formed on the first conductive material layer 196p_1 to be filled within the peripheral grooves 194 p.

A gate conductive structure 196 g may be provided that sequentiallypenetrates the upper interlayer insulating layer ILD2 and the peripheralupper insulating pattern 51 p′ and is electrically connected to the gatecontact structure 48 g.

Next, a semiconductor device according to another example embodimentwill be described with reference to FIGS. 1 and 4.

Referring to FIGS. 1 and 4, a semiconductor substrate 1 including a cellarray area CR and a peripheral circuit area PR may be provided. Thesubstrate 1 may be a semiconductor substrate. A device isolation region3 s defining cell active regions 3 c and a peripheral active region 3 pmay be provided in the substrate 1.

Word lines 12 may be provided the cell active regions 3 c. A transistorTR may be provided in the peripheral circuit area PR. The transistor TRmay include a gate structure 9 formed on the peripheral active region 3p and source/drain regions 11 formed in the peripheral active region 3 pat both sides of the gate structure 9. The gate structure 9 may includea gate dielectric 5, a gate electrode 6, and an insulating gate cappingpattern 7 sequentially stacked. The gate structure 9 may further includean insulating gate spacers 8 formed on sidewalls of the gate electrode 6and the gate capping pattern 7.

A lower interlayer insulating layer ILD1 may be provided on thesubstrate including the word lines 12 and the transistor TR.Semiconductor patterns 24 may be provided that penetrate the lowerinterlayer insulating layer ILD1 and is electrically connected to theword lines 12. The semiconductor patterns 24 may be formed ofcrystalline silicon. Sides of the semiconductor patterns 24 may besurrounded by the lower interlayer insulating layer ILD1. Each of thesemiconductor patterns 24 may include a lower semiconductor region 24Land an upper semiconductor region 24U. The upper semiconductor region24U may have a P-type conductivity and the lower semiconductor region24L may have an N-type conductivity. Therefore, the upper semiconductorregion 24U and the lower semiconductor region 24L may form a PN diode.

Metal-semiconductor compounds 257 may be provided on the semiconductorpatterns 24. Each of the semiconductor patterns 24 may be partiallycovered by each of the metal-semiconductor compounds 257. Therefore, themetal-semiconductor compounds 257 may have a width smaller than that ofthe semiconductor patterns 24. The metal-semiconductor compounds 257 maybe formed of metal silicide. For example, the metal-semiconductorcompounds 257 may include any material selected from the groupconsisting of a Co—Si compound, a Ti—Si compound, a Ta—Si compound, aW—Si compound, and a Ni—Si compound.

Lower electrodes 263 c and data storage patterns 278 sequentiallystacked on the metal-semiconductor compounds 257 may be provided. Eachof the lower electrodes 263 c may be formed in an “L” shape. Forexample, each of the lower electrodes 263 c may include a first portionin direct contact with each of the metal-semiconductor compounds 257,and a second portion protruding upward from a portion of the firstportion. The data storage patterns 278 may be in contact with upper endsof the lower electrodes 263 c.

The sequentially stacked lower electrodes 263 c and data storagepatterns 278 may have a first side Si and a second side S2 facing eachother, and a third side S3 and a fourth side S4 facing each other. Thefirst and second sides S1 and S2 may be parallel to each other, and thethird and fourth sides S3 and S4 may be parallel to each other. Inaddition, the first and second sides S1 and S2 may be parallel to afirst direction, and the third and fourth sides S3 and S4 may beparallel to a second direction crossing the first direction. The firstdirection is perpendicular to the second direction. The third and fourthsides S3 and S4 may be perpendicular to the first and second sides S1and S2.

The first to fourth sides S1 to S4 of the sequentially stacked lowerelectrodes 263 c and data storage patterns 278 may be surrounded byfirst insulating patterns 254 c, first separation patterns 269, andsecond separation patterns 272. For example, a first lower electrode 263c and a first data storage pattern 278 sequentially stacked on any oneof the semiconductor patterns 24 may be disposed between a pair ofsecond separation patterns 272 adjacent to each other and between thefirst insulating pattern 254 c and the first separation pattern 269adjacent to each other.

Each of the first insulating patterns 254 c may include stacked layers,each of the first separation patterns 269 may include an insulatingsingle layer, and each of the second separation patterns 272 may be aninsulating single layer. Each of the insulating patterns 254 c mayinclude a first lower insulating pattern 239 c and a first upperinsulating pattern 251 c sequentially stacked.

The first and second sides S1 and S2 of the sequentially stacked lowerelectrodes 263 c and data storage patterns 278 may be disposed betweenthe first insulating patterns 254 c and the first separation patterns269 adjacent to each other.

The first insulating patterns 254 c may be closer to the first sides ofthe sequentially stacked lower electrodes 263 c and data storagepatterns 278 than the second sides S2 thereof. Each of the firstinsulating patterns 254 c may have a width greater than a distancebetween semiconductor patterns 24. The first insulating patterns 254 cmay be disposed on the lower interlayer insulating layer ILD1 betweenthe semiconductor patterns 24 and cover portions of the semiconductorpatterns 24. Upper surfaces of the semiconductor patterns 24 may becovered by the metal-semiconductor compounds 257 and the firstinsulating patterns 254 c.

The first separation patterns 269 may be closer to the second sides S2of the sequentially stacked lower electrodes 263 c and data storagepatterns 278 than the first sides Si thereof. The third sides S3 and thefourth sides S4 of the sequentially stacked lower electrodes 263 c anddata storage patterns 278 may be disposed between the second separationpatterns 272 adjacent to each other. Insulating spacers 266 a may beinterposed between the second sides S2 of the sequentially stacked lowerelectrodes 263 c and data storage patterns 278 and the first separationpatterns 269. Meanwhile, each of the lower electrodes 263 c may includea portion interposed between each of spacers 266 a and each of the firstinsulating patterns 254 c, and a second portion interposed between eachof the spacers 266 a and each of the metal-semiconductor compounds 257.

A second insulating pattern 254 w and a peripheral insulating pattern254 p may be provided on the lower interlayer insulating layer ILD1. Thesecond insulating pattern 254 w and the peripheral insulating pattern254 p may include the same material as the first insulting patterns 254c and may be positioned at the same level as the first insulatingpatterns 254 c.

Each of the first insulating patterns 254 c may include the first lowerinsulating pattern 239 c and the first upper insulating pattern 251 csequentially stacked. The second insulating pattern 254 w may include asecond lower insulating pattern 239 w and a second upper insulatingpattern 251 w sequentially stacked. The peripheral insulating pattern254 p may include a peripheral lower insulating pattern 239 p and aperipheral upper insulating pattern 251 p.

As described in FIG. 2, conductive word line contact structures 48 w maybe provided that sequentially penetrate the second lower insulatingpattern 239 w and the lower interlayer insulating layer ILD1 and areelectrically connected to the word lines 12. The second upper insulatingpattern 251 w may be at a level higher than the word line contactstructures 48 w.

Peripheral contact structures 48 p may be provided that sequentiallypenetrate the peripheral lower insulating pattern 239 p and the lowerinterlayer insulating layer ILD1 and are electrically connected to thesource/drain regions 11. The peripheral upper insulating pattern 251 pmay be at a level higher than the peripheral contact structures 48 p. Aconductive gate contact structure 48 g may be provided that sequentiallypenetrates the peripheral lower insulating pattern 239 p, the lowerinterlayer insulating layer ILD1 and the gate capping pattern 7 and iselectrically connected to the gate electrode 6.

As described in FIG. 2, on the substrate including the data storagepatterns 278, the lower electrodes 263 c, the spacers 266 a, the firstand second separation patterns 269 and 272, the first insulatingpatterns 254 c, the second insulating pattern 254 w, and the peripheralinsulating pattern 254 p, upper electrodes 81, upper electrode cappingpatterns 84, etching stop layer 87, an upper interlayer insulating layerILD2, first and second conductive structures 96 c and 96 w, peripheralconductive structures 96 p, and a gate conductive structure 96 g may beprovided.

Next, a semiconductor device according to another example embodimentwill be described with reference to FIGS. 1 and 5.

Referring to FIGS. 1 and 5, as described in FIG. 4, semiconductorpatterns 24 with sides surrounded by a lower interlayer insulating layerILD1 and electrically connected to word lines 12, may be provided on asubstrate including the word lines 12 and a transistor TR, andmetal-semiconductor compounds 257 may be provided on the semiconductorpatterns 24. Each of the metal-semiconductor compounds 257 may partiallycover each of the semiconductor patterns 24. Lower electrodes 263 c anddata storage patterns 278 sequentially stacked on themetal-semiconductor compounds 257 may be provided. Further, thesequentially stacked lower electrodes 263 c and data storage patterns278 may have first and second sides S1 and S2 facing each other, andthird and fourth sides S3 and S4 substantially perpendicular to thefirst and second sides S1 and S2 as described in FIG. 4. The first tofourth sides S1 to S4 of the sequentially stacked lower electrodes 263 cand data storage patterns 278 may be surrounded by first insulatingpatterns 254 c′, first separation patterns 269, and second separationpatterns 272.

The first and second sides S1 and S2 of the sequentially stacked lowerelectrodes 263 c and data storage patterns 278 may be disposed betweenthe first insulating patterns 254 c′ and the first separation patterns269 adjacent to each other. The first insulating patterns 254 c′ may becloser to the first sides S1 of the sequentially stacked lowerelectrodes 263 c and data storage patterns 278 than the sides S2thereof. Each of the first insulating patterns 254 c′ may have a widthgreater than a distance spaced between the semiconductor patterns 24.The first insulating patterns 254 c′ may be disposed on the lowerinterlayer insulating layer ILD1 between the semiconductor patterns 24and partially cover the semiconductor patterns 24.

The first separation patterns 269 may be closer to the second sides S2of the sequentially stacked lower electrodes 263 c and data storagepatterns 278 than the side S1 thereof. The third sides S3 and the fourthsides S4 of the sequentially stacked lower electrodes 263 c and datastorage patterns 278 may be disposed between the second separationpatterns 272 adjacent to each other. Insulating spacers 266 a may beinterposed between the second sides S2 of the sequentially stacked lowerelectrodes 263 c and data storage patterns 278 and the first separationpatterns 269. Each of the lower electrodes 263 c may include a firstportion interposed between each of the spacers 266 a and each of thefirst insulating patterns 254 c′, and a second portion interposedbetween each of spacers 266 a and each of the metal-semiconductorcompounds 257.

A second insulating pattern 254 w′ and a peripheral insulating pattern254 p′ may be provided on the interlayer insulating layer ILD1. Thesecond insulating patterns 254 w′ and the peripheral insulating pattern254 p′ may include the same material as the first insulating patterns254 c′ and be positioned at the same level as the first insulatingpatterns 254 c′. Each of the first insulating patterns 254 c′ mayinclude a first lower insulating pattern 239 c′ and a first upperinsulating pattern 251 c′ sequentially stacked. The second insulatingpattern 254 w′ may include a second lower insulating pattern 239 w′ anda second upper insulating pattern 251 w′ sequentially stacked. Theperipheral insulating pattern 254 p′ may include a peripheral lowerinsulating pattern 239′ and a peripheral upper insulating pattern 251 p′sequentially stacked.

The first lower insulating pattern 239 c′, the second lower insulatingpattern 239 w′, and the peripheral lower insulating pattern 239 p′ mayhave a first vertical thickness T1, and the first upper insulatingpattern 251 c′, the second upper insulating pattern 251 w′, and theperipheral upper insulating pattern 251 p′ may have a second verticalthickness T2 smaller than the first vertical thickness T1.

Conductive word line contact structures 48 w may be provided thatsequentially penetrate the second lower insulating pattern 239 w′ andthe lower interlayer insulating layer ILD1 and are electricallyconnected to the word lines 12. Conductive peripheral contact structures48 p may be provided that sequentially penetrate the peripheral lowerinsulating pattern 239 p′ and the lower interlayer insulating layer ILD1and are electrically connected to source/drain regions 11. A conductivegate contact structure 48 g may be provided that sequentially penetratesthe peripheral lower insulating pattern 239 p′, the lower interlayerinsulating layer ILD1 and a gate capping pattern 7 and is electricallyconnected to a gate 6.

An upper interlayer insulating layer ILD2 may be provided on thesubstrate including the data storage patterns 278, the lower electrodes263 c, the spacers 266 a, the first and second separation patterns 269and 272, the first insulating patterns 254 c′, the second insulatingpattern 254 w′, and the peripheral insulating pattern 254 p′.

First grooves 194 c may be provided that penetrate the upper interlayerinsulating layer ILD2 and expose the data storage patterns 278. Firstconductive patterns 196 c filling the first grooves 194 c may beprovided. Each of the first conductive patterns 196 c may include afirst conductive material layer 196 c_1 covering an inner surface ofeach of the first grooves 194 c, and a second conductive material layer196 c_2 formed on the first conductive material layer 196 c_1 andfilling each of the first grooves 194 c.

Second grooves 196 w may be provided that sequentially penetrate theupper interlayer insulating layer ILD2 and the second upper insulatingpatterns 251 w′ and expose the word line contact structures 48 w. Secondconductive patterns 196 w filling the second grooves 194 w may beprovided. Each of the second conductive patterns 196 w may include afirst conductive material layer 196 w_1 formed on an inner surface ofeach of the second grooves 194 w, and a second conductive material layer196 w_2 formed on the first conductive material layer 196 w_1 andfilling each of the second grooves 194 w.

Peripheral grooves 194 p may be provided that sequentially penetrate theupper interlayer insulating layer ILD2 and the peripheral upperinsulating pattern 251 p′ and expose the peripheral contact structures48 p. Peripheral conductive patterns 196 p filling the peripheralgrooves 194 p may be provided. Each of the peripheral conductivepatterns 196 p may include a first conductive material layer 196 p_1formed on an inner surface of each of the peripheral grooves 194 p, anda second conductive material layer 196 p_2 formed on the firstconductive material layer 196 p_1 and filling each of the peripheralgrooves 194 p. A gate conductive structure 196 g may be provided thatsequentially penetrates the upper interlayer insulating layer IDL2 andthe peripheral upper insulating pattern 251 p′ and is electricallyconnected to the gate contact structure 48 g.

FIGS. 6, 7A to 7C, 8A, and 8B are process sequence diagrams illustratingmethods of fabricating semiconductor devices according to some exampleembodiments of inventive concepts. Hereinafter, the methods offabricating semiconductor substrate according to some exampleembodiments of inventive concepts will be described with reference toFIGS. 6, 7A to 7C, 8A, and 8B.

First, a method of fabricating a semiconductor device according to anexample embodiment will be described with reference FIG. 6.

Referring to FIG. 6, a semiconductor pattern may be formed on asemiconductor substrate with a side surrounded by a lower interlayerinsulating layer (S5). The semiconductor pattern may be formed ofcrystalline silicon. A PN diode may be formed in the semiconductorpattern. A lower insulating layer may cover the lower interlayerinsulating layer and the semiconductor pattern (S10). The lowerinsulating layer may be formed of silicon oxide or silicon nitride. Aconductive structure, which penetrates the lower insulating layer andthe lower interlayer insulating layer, may be formed (S15).

An upper insulating layer may cover the lower insulating layer and thecontact structure (S20). The upper insulating layer may be formed ofsilicon oxide or silicon nitride.

The lower insulating layer and the upper insulating layer are patternedto form an insulating pattern structure which covers the contactstructure and exposes the semiconductor pattern (S25). The upper andlower insulating layers may be selectively removed to expose thesemiconductor patterns without exposing the contact structure.

A metal-semiconductor compound may be formed on the exposedsemiconductor pattern (S30). The metal-semiconductor compound may beformed of metal silicide. For example, the metal-semiconductor compoundmay include any material selected from the group consisting of a Co—Sicompound, a Ti—Si compound, a Ta—Si compound, a W—Si compound, and aNi—Si compound.

A lower electrode may be formed on the metal-semiconductor compound(S35). A data storage pattern may be formed on the lower electrode(S40).

The data storage pattern may be formed of a material for storinginformation of a phase-change random access memory device. For example,the data storage pattern may include a phase-changeable material havingan amorphous state with high resistivity and a crystalline phase withlow resistivity according to heating temperature and heating time. Thedata storage pattern may include a material including a chalcogenidecompound such as GeSbTe, GeTeAs, SnTeSn, GeTe, SbTe, SeTeSn, GeTeSe,SbSeBi, GeBiTe, GeTeTi, InSe, GaTeSe, or InSbTe. Alternatively, the datastorage pattern may include a material in which any element selectedfrom the group consisting of carbon (C), nitrogen (N), silicon (Si), andoxygen (O) is contained in any material selected from the groupconsisting of a GeSbTe layer, a GeTeAs layer, a SnTeSn layer, a GeTelayer, a SbTe layer, a SeTeSn layer, a GeTeSe layer, a SbSeBi layer, aGeBiTe layer, a GeTeTi layer, a InSe layer, a GaTeSe layer, and a InSbTelayer.

The lower electrode may include a material serving as a heaterconfigured to heat the data storage pattern. For example, the lowerelectrode may include any material selected from the group consisting ofTiN, TiAlN, TaN, WN, MoN, NbN, TiSiN, TiBN, ZrSiN, WSiN, WBN, ZrAlN,MoAlN, TaSiN, TaAlN, TiW, TiAl, TiON, TiAlON, WON, and TaON.

According to some example embodiments of inventive concepts, the processS5 of forming the semiconductor pattern with the side surrounded by thelower interlayer insulating layer may be performed through variousmethods. Hereinafter, the process S5 of forming the semiconductorpattern with the side surrounded by the lower interlayer insulatinglayer will be described with reference to FIGS. 7A to 7C.

First, an example embodiment of the process S5 of forming thesemiconductor pattern with the side surrounded by the lower interlayerinsulating layer will be described with reference to FIG. 7A.

Referring to FIG. 7A, the lower interlayer insulating layer may beformed on the semiconductor substrate (S5 a_1). The lower interlayerinsulating layer is patterned to form a hole in the lower interlayerinsulating layer (S5 a_2). The semiconductor pattern may be formed inthe hole (S5 a_3). The semiconductor pattern may be formed usingepitaxial technology. A PN diode may be formed in the semiconductorpattern. Therefore, the semiconductor pattern may be formed thatpenetrates the lower interlayer insulating layer and the side thereofsurrounded by the lower interlayer insulating layer (S5).

Next, one variation of the process S5 of forming the semiconductorpattern with the side surrounded by the lower interlayer insulating willbe described with reference to FIG. 7B.

Referring to FIG. 7B, the semiconductor pattern may be formed on thesemiconductor substrate (S5 b_1). An insulating material layer may beformed on the semiconductor substrate including the semiconductorpattern (S5 b_2). The insulating material layer may be planarized untilthe semiconductor pattern is exposed to form the lower interlayerinsulating layer (S5 b_3). Therefore, the semiconductor pattern with theside surrounded by the lower interlayer insulating layer may be formed(S5).

Next, another variation of the process S5 of forming the semiconductorpattern with the side surrounded by the lower interlayer insulatinglayer will be described with reference to FIG. 7C.

Referring to FIG. 7C, semiconductor lines may be formed on thesemiconductor substrate (S5 c_1). A first interlayer insulating layermay be formed between the semiconductor lines (S5 c_2). Thesemiconductor lines are patterned to form semiconductor patterns (S5c_3). A second interlayer insulating layer may be formed between thesemiconductor patterns (S5 c_4). The first and second interlayerinsulating layer may constitute the lower interlayer insulating layer.Therefore, the semiconductor pattern with the side surrounded by thelower interlayer insulating layer may be formed (S5).

Hereinafter, a method of fabricating a semiconductor device according tosome example embodiments of inventive concepts will be described withreference to FIGS. 6 and 8A.

Referring to FIGS. 6 and 8A, a substrate may be provided in which theprocesses from the forming a semiconductor pattern (S5) to the formingdata storage pattern on the lower electrode (S40) as described in FIG. 6are performed. Subsequently, an upper electrode may be formed on thedata storage pattern (S45). An upper interlayer insulating layer may beformed on the substrate including the upper electrode (S50).

A first groove, which penetrates the upper interlayer insulating layerand exposes the upper electrode, and a second groove, which penetratesthe upper interlayer insulating layer and the upper insulating layer andexposes the contact structure, may be formed (S55). A first conductivestructure may be formed in the first groove and simultaneously, a secondconductive structure may be formed in the second groove (S60).

Next, a method of fabricating a semiconductor device according to someexample embodiments of inventive concepts will be described withreference to FIGS. 6 and 8B.

Referring to FIGS. 6 and 8B, a substrate may be provided in which theprocesses from the forming a semiconductor pattern (S5) to the formingdata storage pattern on the lower electrode (S40) as described in FIG. 6are performed (S145). An upper interlayer insulating layer may be formedon the semiconductor substrate including the data storage pattern(S150).

A first groove, which penetrates the upper interlayer insulating layerand exposes the data storage pattern, and a second groove, whichpenetrates the upper interlayer insulating layer and the upperinsulating layer and exposes the contact structure, may be formed(S155). A first conductive structure may be formed in the first grooveand simultaneously, a second conductive structure may be formed in thesecond groove (S160). The first conductive structure may include thesame material as the second conductive structure.

A method of fabricating a semiconductor device according to an exampleembodiment will be described with reference to FIGS. 1 and 9A to 9W. InFIGS. 9A to 9W, a portion indicated by “C1” shows a region taken alongline I-I′ of FIG. 1, a portion indicated by “C2” shows a region takenalong line II-II′ of FIG. 1, and a portion indicated by “P” shows aregion taken along line III-III′ of FIG. 1.

Referring to FIGS. 1 and 9A, a substrate 1 including a first area CR anda second area PR may be provided. The substrate 1 may be a semiconductorsubstrate. The substrate 1 may be a silicon substrate. The first area CRmay be a cell array area of a memory device and a second area PR may bea peripheral circuit area of the memory device.

A device isolation region 3 s defining active regions may be formed inthe substrate 1. The device isolation region 3 s may be formed usingtrench isolation technology. The device isolation region 3 s may definecell active regions 3 c in the substrate 1 of the cell array area CR,and a peripheral active region 3 p in the substrate 1 of the peripheralcircuit area PR.

In some example embodiments, the cell active regions 3 c may have lineshapes spaced apart from each other when viewed in a plane.

A peripheral transistor TR may be formed on the substrate of theperipheral circuit area PR. The peripheral transistor TR may include agate structure 9 formed on the peripheral active region 3 p, andsource/drain regions 11 formed in the peripheral active region 3 p atboth sides of the gate structure 9. The gate structure 9 may include agate dielectric 5, a conductive gate electrode 6, and an insulating gatecapping pattern 7 sequentially stacked on the peripheral active region 3p, and may further include insulating gate spacers 8 formed on sides ofthe gate electrode 6 and the gate capping pattern 7.

Word lines 12 may be formed in the cell active regions 3 c. The wordline 12 may be formed by ion-implanting impurities into the cell activeregion 3 c. The word lines 12 may have a different conductivity fromthat of the cell active regions 3 c. For example, the cell activeregions 3 c may have a P-type conductivity and the word line 12 may havean N-type conductivity.

Referring to FIGS. 1 and 9B, a buffer oxide layer 14 and an etch stoplayer 15 may be sequentially formed on the substrate including theperipheral transistor TR and the word lines 12. The buffer oxide layer14 may be formed of silicon oxide and the etch stop later 15 may beformed of silicon nitride. A lower interlayer insulating layer 18 may beformed on the etch stop layer 15. The lower interlayer insulating layer18 may be formed of silicon oxide or a low-k dielectric.

Referring to FIGS. 1 and 9C, the lower interlayer insulating layer 18,the etch stop layer 15, and the buffer oxide layer 14 may be patternedto form diode holes 21 which penetrate the lower interlayer insulatinglayer 18, the etch stop layer 15, and the buffer layer 14 and expose theword lines 12.

The diode holes 21 may be spaced apart from each other. A plurality ofdiode holes may be formed on one word line 12 to be spaced apart fromeach other.

Referring to FIGS. 1 and 9D, semiconductor patterns 24 may be formed inthe diode holes 21. Sides of the semiconductor patterns 24 may besurrounded by the lower interlayer insulating layer 18. The lowerinterlayer insulating layer 18 may be formed on the semiconductorsubstrate of the cell array area CR and the peripheral circuit area PR.The semiconductor patterns 24 may penetrate the lower interlayerinsulating layer 18 formed on the semiconductor substrate of the cellarray area CR. The semiconductor patterns 24 may be formed on thesemiconductor substrate of the cell array area CR.

The semiconductor patterns 24 may be formed of a crystallinesemiconductor material. The semiconductor patterns 24 may be formed ofcrystalline silicon. For example, the semiconductor patterns 24 mayinclude a single crystalline silicon grown from the word lines 12exposed by the diode holes 21 using a selective epitaxial growthprocess. However, example embodiments of inventive concepts are notlimited thereto. For example, the process of forming the semiconductorpatterns 24 may include forming an amorphous silicon filling the diodeholes 21, and crystallizing the amorphous silicon into a crystallinesilicon through an annealing process. The crystalline silicon mayinclude polycrystalline silicon or single crystalline silicon.

The semiconductor patterns 24 with the sides surrounded by the lowerinterlayer insulating layer 18 have been illustrated in FIGS. 9A to 9D.For example, in FIGS. 9A to 9D, as described in FIG. 7A, the method (S5a_1 to S5 a_3) of forming the semiconductor patterns 24 after formingthe lower interlayer insulating layer 18 has been described, but exampleembodiments of inventive concepts are not limited thereto. For example,as described in FIG. 7B, the lower interlayer insulating layer may beformed after forming the semiconductor patterns (see S5 b 1_1 to S5b_3). Alternatively, as described in FIG. 7C, the semiconductor patterns24 and the lower interlayer insulating layer 18 may be formed using themethod of forming semiconductor lines on the semiconductor substrate,patterning the semiconductor lines to form the semiconductor patterns,and forming a second interlayer insulating layer between thesemiconductor patterns 24.

Referring to FIGS. 1 and 9E, a first impurity implantation process 36may be performed to form upper semiconductor regions 24U within thesemiconductor patterns 24. The first impurity implantation process 36may include implanting impurities such as boron (B) into upper regionsof the semiconductor patterns 24, and performing an annealing process toactivate the implanted impurities. Further, during the annealingprocess, impurities in the word lines 12 may be diffused into lowerregions of the semiconductor patterns 24 to form lower semiconductorregions 24L. Therefore, each of the semiconductor patterns 24 mayinclude the upper semiconductor region 24U and the lower semiconductorregion 24L disposed below the upper semiconductor region 24U.

In another example embodiment, the process of forming the uppersemiconductor region 24U and the lower semiconductor region 24L mayinclude implanting impurities of group III on the periodic table such asboron (B) into the upper regions of the semiconductor patterns 24,implanting impurities of group V on the periodic table such asphosphorus (P) or arsenic (As) into the lower regions of thesemiconductor patterns 24, and performing an annealing process toactivate the injected impurities to form the upper semiconductor regions24U in the upper regions of the semiconductor patterns 24 and the lowersemiconductor regions 24L in the lower regions of the semiconductorpatterns 24.

The upper semiconductor region 24U and the lower semiconductor region24L in each of the semiconductor patterns 24 may form a PN diode.

Referring to FIGS. 1 and 9F, a lower insulating layer 39 may be formedon the substrate including the upper semiconductor regions 24U and thelower semiconductor regions 24L. The lower insulating layer 39 may coverthe semiconductor patterns 24 and the lower interlayer insulating layer18.

In some example embodiments, the lower insulating layer 39 may include amaterial layer having an etch selectivity to the lower interlayerinsulating layer 18. For example, the lower interlayer insulating layer18 may be formed of silicon oxide. The lower insulating layer 39 may beformed of silicon nitride. Alternatively, the lower insulating layer 39may be formed of silicon oxide.

Referring to FIGS. 1 and 9G, word line contact holes 41 w and peripheralcontact holes 41 p may be formed that sequentially penetrate the lowerinsulating layer 39, the lower interlayer insulating layer 18, the etchstop layer 15, and the buffer oxide layer 14.

The word line contact holes 41 w may expose the word lines 12 and may bespaced apart from the semiconductor patterns 24. The peripheral contactholes 41 p may expose the source/drain regions 11. In addition, whileforming the word line contact holes 41 w and the peripheral contactholes 41 p, a gate contact hole may be formed that sequentiallypenetrates the lower insulating layer 39, the lower interlayerinsulating layer 18, the etch stop layer 15, the buffer oxide layer 14,and the gate capping pattern 7.

A second impurity implantation process 43 may be performed to formadditional cell impurity regions 45 w in the word lines 12 exposed bythe word line contact holes 41 w, and additional peripheral impurityregions 45 p in the source/drain regions 11 exposed by the peripheralcontact holes 41 p. The second impurity implantation process 43 mayinclude an ion implantation process of implanting impurities into theword line 12 and/or the source/drain regions 11, and an annealingprocess of activating the implanted impurities. The impurities implantedinto the word lines 12 and/or the source/drain regions 11 through thesecond impurity implantation process 43 may be an element of group 3B onthe periodic table such as boron (B). Alternatively, the impuritiesimplanted into the word lines 12 and/or the source/drain regions 11through the second impurity implantation process 43 may be an element ofgroup 5B on the periodic table such as phosphorus (P) or arsenic (As).The additional cell impurity region 45 w may have the same conductivityas the word lines 12, and the additional peripheral impurity region 45 pmay have the same conductivity as the source/drain regions 11. Theannealing process of activating the impurities implanted in the wordlines 12 and/or the source/drain regions 11 in the second impurityimplantation process 43 may be performed at a temperature of about 1000°C. to about 1200° C. using a rapid thermal annealing process.

In some example embodiments, when the word lines 12 and the source/drainregions 11 have the same conductivity, the additional cell impurityregions 45 w and the additional peripheral impurity regions 45 p may besimultaneously formed through the second impurity implantation process43. Alternatively, when the word lines 12 and the source/drain regions11 have a different conductivity from each other, any one of theadditional cell impurity regions 45 w and the additional peripheralimpurity regions 45 p may be first formed.

FIGS. 1 and 9H, word line contact structures 48 w filling the word linecontact holes 41 w, and peripheral contact structures 48 p filling theperipheral contact holes 41 p may be formed on the substrate includingthe additional cell impurity regions 45 w and the additional peripheralimpurity regions 45 p. Further, a gate contact structure 48 g fillingthe gate contact hole may be formed.

The word line contact structures 48 w may sequentially penetrate thelower insulating layer 39, the lower interlayer insulating layer 18, theetch stop layer 15, and the buffer oxide layer 14 and may beelectrically connected to the word lines 12. The peripheral contactstructures 48 p may sequentially penetrate the lower insulating layer39, the lower interlayer insulating layer 18, the etch stop layer 15,and the buffer oxide layer 14 and may be electrically connected to thesource/drain regions 11 of the peripheral transistor TR. The gatecontact structure 48 g may sequentially penetrate the lower insulatinglayer 39, the lower interlayer insulating layer 18, the etch stop layer15, the buffer oxide layer 14, and the gate capping pattern 7 and may beelectrically connected to the gate electrode 6.

The process of forming the word line contact structures 48 w, theperipheral contact structures 48 p, and the gate contact structure 48 gmay include conformally forming a first conductive material layer on thesubstrate including the additional cell impurity regions 45 w and theadditional peripheral impurity regions 45 p, forming a second conductivematerial layer filling the word line contact holes 41 w, the peripheralcontact holes 41 p, and the gate contact hole on the first conductivematerial layer, and planarizing the second conductive material layer andthe first conductive material layer until the lower insulating layer 39is exposed. The planarization may be performed using an etch backprocess and/or a chemical mechanical polishing (CMP) process. Therefore,the word line contact structures 48 w may include the first conductivematerial layers 48 w_1 and the second conductive material layers 48 w_2remaining in the word line contact holes 41 w. The peripheral contactstructures 48 p may include the first conductive material layers 48 p_1and the second conductive material layers 48 p_2 remaining in theperipheral contact holes 41 p. The gate contact structures 48 g mayinclude the first conductive material layer and the second conductivematerial layer remaining in the gate contact hole.

Referring to FIGS. 1 and 9I, an upper insulating layer 51 may be formedon the substrate including the word line contact structures 48 w, theperipheral contact structures 48 p, and the gate contact structure 48 g.The upper insulating layer 51 may cover the lower insulating layer 39,the word line contact structures 48 w, the peripheral contact structures48 p, and the gate contact structure 48 g. The upper insulating layer 51may be formed of an insulating material such as silicon oxide and/orsilicon nitride.

In some example embodiments, the upper insulating layer 51 may have athickness smaller than that of the lower insulating layer 39.Alternatively, the upper insulating layer 51 may have a thicknessgreater than that of the lower insulating layer 39.

Referring to FIGS. 1 and 9J, the upper insulating layer 51 and the lowerinsulating layer 39 may be patterned to form insulating patterns whichexpose the semiconductor patterns 24 and cover the word line contactstructures 48 w, the peripheral contact structures 48 p, and the gatecontact structure 48 g.

The insulating patterns may include first insulating patterns 54 c, asecond insulating pattern 54 w, and a peripheral insulating pattern 54p.

The first insulating patterns 54 c may be formed on the lower interlayerinsulating layer 18 between the semiconductor patterns 24. Each of thefirst insulating patterns 54 c may include a sequentially stacked firstlower insulating pattern 39 c and first upper insulating pattern 51 c.The first insulating patterns 54 c may have line shapes spaced apartfrom each other. Each of the first insulating patterns 54 c may have afirst width W1. A distance W2 between the first insulating patterns 54 cadjacent to each other may be greater than the first width W1. Adistance W2 between the first insulating patterns 54 c adjacent to eachother may be greater than a distance W3 between the semiconductorpatterns 24 adjacent to each other.

The second insulating pattern 54 w may be formed on the word linecontact structures 48 w. The second insulating pattern 54 w may includea sequentially stacked second lower insulating pattern 39 w and secondupper insulating pattern 51 w. The second lower insulating pattern 39 wmay be formed on sides of the word line contact structures 48 w. Thesecond upper insulating pattern 51 w may cover an upper surface of thesecond lower insulating pattern 39 w and upper surfaces of the word linecontact structures 48 w.

The peripheral insulating pattern 54 p may include a sequentiallystacked peripheral lower insulating pattern 39 p and peripheral upperinsulating pattern 51 p. The peripheral insulating pattern 54 p may beformed on the peripheral contact structures 48 p and the gate contactstructure 48 g. The peripheral lower insulating pattern 39 p may beformed on sides of the peripheral contact structures 48 p and the gatecontact structure 48 g. The peripheral upper insulating pattern 51 p maycover upper surfaces of the peripheral contact structures 48 p and thegate contact structure 48 g, and an upper surface of the peripherallower insulating pattern 39 p.

Sides of each of the word line contact structures 48 w may be surroundedby the lower interlayer insulating layer 18 and the second lowerinsulating pattern 39 w, and the upper surface of each of the word linecontact structures 48 w may be covered by the second upper insulatingpattern 51 w. Upper sides of the word line contact structures 48 w maybe surrounded by the second lower insulating pattern 39 w.

Sides of each of the peripheral contact structures 48 p and gate contactstructure 48 g may be surrounded by the lower interlayer insulatinglayer 18 and the peripheral lower insulating pattern 39 p, and the uppersurface of each of the peripheral contact structures 48 p and gatecontact structure 48 g may be covered by the peripheral upper insulatingpattern 51 p. Upper sides of the peripheral contact structures 48 p andthe gate contact structure 48 g may be surrounded by the peripherallower insulating pattern 39 p.

Referring to FIGS. 1 and 9K, after forming the insulating patterns 54 c,54 w, and 54 p, metal-semiconductor compounds 57 may be formed on theexposed semiconductor patterns 24. The process of forming themetal-semiconductor compounds 57 may include forming a metal layer onthe substrate including the insulating patterns 54 c, 54 w, and 54 p,performing a silicide annealing process on the substrate including themetal layer to cause the metal layer to react with the semiconductorpatters 24, thereby forming the metal-semiconductor compounds 57, andremoving a unreacted metal layer. The metal-semiconductor compounds 57may be formed of metal silicide. The metal-semiconductor compounds 57may include any material selected from the group consisting of a Co—Sicompound, a Ti—Si compound, a Ta—Si compound, a W—Si compound, and aNi—Si compound.

Since the metal-semiconductor compounds 57 may be formed after the wordline contact structures 48 w and the peripheral contact structures 48 p,degradation of the metal-semiconductor compounds 57 can be prevented. Asdescribed in FIG. 9G, since the metal-semiconductor compounds 57 areformed after the second impurity implantation process 43 including theannealing process performed at the temperature of about 1000° C. toabout 1200° C. to activate the implanted impurities, themetal-semiconductor compounds 57 are not degraded by the annealingprocess of the second impurity implantation process 43.

Referring to FIGS. 1 and 9L, first spacers 60 may be formed on the sidesof the insulating patterns 54 c, 54 w, and 54 p. For example, the firstspacers 60 may be formed on the sides of the first insulating patterns54 c. The process of forming the first spacers 60 may include forming afirst spacer layer on the substrate including the insulating patterns 54c, 54 w, and 54 p, and anisotropically etching the first spacer layer sothat the first spacer layer remains on the sides of the insulatingpatterns 54 c, 54 w, and 54 p. The first spacers 60 may be formed of aninsulating material such as silicon oxide or silicon nitride. The firstspacers 60 may have a width smaller than that of the semiconductorpatterns 24.

The first spacers 60 formed on the sides of the first insulatingpatterns 54 c in the cell array area CR may partially cover themetal-semiconductor compounds 57. A portion of each of themetal-semiconductor compounds 57 may be covered by each of the spacers60 and a remaining portion thereof may be exposed.

Referring to FIGS. 1 and 9M, a lower electrode layer 63 may beconformally formed on the substrate including the first spacers 60. Thelower electrode layer 63 may include any material selected from thegroup consisting of TiN, TiAlN, TaN, WN, MoN, NbN, TiSiN, TiBN, ZrSiN,WSiN, WBN, ZrAlN, MoAlN, TaSiN, TaAlN, TiW, TiAl, TiON, TiAlON, WON, andTaON.

A spacer layer 66 may be conformally formed on the lower electrode layer63. The spacer layer 68 may be formed of an insulating material such assilicon oxide or silicon nitride.

Referring to FIGS. 1 and 9N, the spacer layer 66 and the lower electrodelayer 63 may be sequentially anisotropically etched to form secondspacers 66 a and the lower electrode lines 63 a. Since the firstinsulating patterns 54 c may be formed in line shapes, the secondspacers 66 a and the lower electrode lines 63 a may also be formed inline shapes.

A first separation layer 69 may be formed on the substrate including thesecond spacers 66 a and the lower electrode lines 63 a. The firstseparation layer 69 may be formed of an insulating layer such as siliconoxide or silicon nitride.

Referring to FIGS. 1 and 9O, the first separation layer 69 may beplanarized to form first separation patterns 69 a. The first separationpatterns 69 a may be formed in line shapes to be spaced apart from eachother. The process of forming first separation patterns 69 a may includeplanarizing the first separation layer 69 using a planarization processsuch a CMP process. While planarizing the first separation layer 69using the planarization process such as a CMP process, verticalthicknesses of the first insulating patterns 54 c, the second insulatingpattern 54 w, and the peripheral insulating pattern 54 p may be reducedby the planarization process. Each of the first insulating patterns 54 cmay include a sequentially stacked first lower insulating pattern 39 cand first upper insulating pattern 51 c, the second insulating patterns54 w may include a sequentially stacked second lower insulating pattern39 w and upper insulating pattern 51 w, and the peripheral insulatingpattern 54 p may include a sequentially stacked peripheral lowerinsulating pattern 39 p and peripheral upper insulating pattern 51 p.

In some example embodiments, the first upper insulating patterns 51 c,the second upper insulating pattern 51 w, and the peripheral insulatingpattern 51 p may have a vertical thickness smaller than that of thefirst lower insulating patterns 39 c, the second lower insulatingpatterns 39 w, and the peripheral lower insulating pattern 39 p.

Alternatively, the first upper insulating patterns 51 c, the secondupper insulating pattern 51 w, and the peripheral upper insulatingpattern 51 p may have a vertical thickness equal to or greater than thatof the first lower insulating patterns 39 c, the second lower insulatingpatterns 39 w, and the peripheral lower insulating pattern 39 p.

The first separation patterns 69 a may be disposed between the firstinsulating patterns 54 c. For example, one first separation pattern 69 amay be disposed between two first insulating patterns 54 c adjacent toeach other. Further, one first insulating pattern 54 c may be disposedbetween two first separation patterns 69 a adjacent to each other.

The first spacer 60, the lower electrode line 63 a, and the secondspacer 66 a may be disposed between the first insulating pattern 54 cand the first separation pattern 69 a adjacent to each other. Further,the first spacer 60 may be disposed closer to the first insulatingpattern 54 c than the first separation pattern 69 a, and the secondspacer 66 a may be disposed closer to the first separation pattern 69 athan the first insulating pattern 54 c. The lower electrode line 63 amay include a portion interposed between the first spacer 60 and thesecond spacer 66 a, and a portion extending between the second spacer 66a and the metal-semiconductor compound 57.

Referring to FIGS. 1 and 9P, trenches 70 for cutting the lower electrodelines 63 a may be formed. Lower electrode lines 63 b cut by the trenches70 may be disposed on the metal-semiconductor compounds 57 and to beelectrically connected to the metal-semiconductor compounds 57. The cutlower electrode lines 63 b may be referred to as lower electrodepatterns.

The trenches 70 may be formed by patterning the lower electrode lines 63a and the second spacers 66 a. The trenches 70 may be formed in lineshapes by patterning the lower electrode lines 63 a, the second spacers66 a, the first spacers 60, the first separation patterns 69 a, and thefirst insulating patterns 54 c.

Referring to FIGS. 1 and 9Q, second separation patterns 72 filling thetrenches 70 may be formed. The second separation patterns 72 may beformed of silicon oxide or silicon nitride. The process of forming thesecond separation patterns 72 may include forming an insulating layer onthe substrate including the trenches 70, and planarizing the insulatinglayer to be defined within the trenches 70.

Referring to FIGS. 1 and 9R, the lower electrode patterns 63 b may bepartially etched to form lower electrodes 63 c. Upper surfaces of thelower electrodes 63 c may be at a level lower than upper surfaces of thefirst and second spacers 60 and 66 a, upper surfaces of the first andsecond separation patterns 69 a and 72, and upper surfaces of the firstand second insulating patterns 54 c and 54 w. Holes 75 defined by thefirst and second spacers 60 and 66 a and the second separation patterns72 may be formed by the partial etching of the lower electrode patterns63 b.

Referring to FIGS. 1 and 9S, data storage patterns 78 may be formedwithin the holes 75. The data storage patterns 78 may be directlyconnected to the lower electrodes 63 c. The data storage patterns 78 mayinclude a material layer for storage of information of the PCRAM. Forexample, the data storage patterns 78 may include a phase-changeablematerial having an amorphous phase with high resistivity and acrystalline phase with low resistivity according to heating temperatureand heating time. For example, the data storage patterns may include amaterial including a chalcogenide compound, such as any materialselected from the group consisting of GeSbTe, GeTeAs, SnTeSn, GeTe,SbTe, SeTeSn, GeTeSe, SbSeBi, GeBiTe, GeTeTi, InSe, GaTeSe, and InSbTe.Alternatively, the data storage patterns 78 may include a dopedchalcogenide compound, for example, a material layer in which anyelement selected from C, Ni, Si, and O is contained in any materialselected from the group consisting of a GeSbTe layer, a GeTeAs layer, aSnTeSn layer, a GeTe layer, a SbTe layer, a SeTeSn layer, a GeTeSelayer, a SbSeBi layer, a GeBiTe layer, a GeTeTi layer, a InSe layer, aGaTeSe layer, and a InSbTe layer.

The process of forming the data storage patterns 78 may include forminga material layer for data storage on the substrate including the holes75, and planarizing the material layer until the upper surfaces of thefirst and second spacers 60 and 66 a, the second separation patterns 72,the first and second insulating patterns 54 c and 54 w, and theperipheral insulating patterns 54 p are exposed. The planarization maybe performed using an etch back process and/or a CMP process.

Referring to FIGS. 1 and 9T, an upper electrode layer may be formed onthe substrate including the data storage patterns 78. Upper electrodecapping patterns 84 may be formed on the upper electrode layer. Theupper electrode layer may be etched using the upper electrode cappingpatterns 84 as an etch mask to form the upper electrodes 81. The upperelectrodes 81 may be formed in line shapes crossing the word lines 12.The upper electrodes 81 may be formed on the data storage patterns 78.The upper electrodes 81 may be electrically connected to the datastorage patterns 78.

Referring to FIGS. 1 and 9U, an etch stop layer 87 may be formed on thesubstrate including the upper electrodes 81. An upper interlayerinsulating layer 90 (ILD2) may be formed on the etch stop layer 87. Theupper interlayer insulating layer 90 may be formed of an insulatingmaterial having an etch selectivity to the etch stop layer 87. Forexample, the etch stop layer 87 may be formed of silicon nitride, andthe upper interlayer insulating layer 90 may be formed of silicon oxideor low-k dielectric.

Referring to FIGS. 1 and 9V, first grooves 93 c, which sequentiallypenetrate the upper interlayer insulating layer 90, the etch stop layer87, and the upper electrode capping patterns 84 and expose the upperelectrodes 81, second grooves 93 w, which sequentially penetrate theupper interlayer insulating layer 90, the etch stop layer 87, and thesecond upper insulating pattern 51 w and expose the word line contactstructures 48 w, and peripheral grooves 93 p, which sequentiallypenetrate the upper interlayer insulating layer 90, the etch stop layer87, and the peripheral upper insulating pattern 51 p and expose theperipheral contact structures 48 p, may be formed. Further, a gategroove, which sequentially penetrates the upper interlayer insulatinglayer 90, the etch stop layer 87, and the peripheral upper insulatingpattern 51 p and exposes the gate contact structure 48 g, may be formed.

The first grooves 93 c, which expose the upper electrodes 81, may haveline shapes spaced apart from each other. The first grooves 93 c mayvertically overlap the data storage patterns 78, the second grooves 93 wmay vertically overlap the word line contact structure 48 w, and theperipheral grooves 93 p may vertically overlap the peripheral contactstructures 48 p.

Referring to FIGS. 1 and 9W, a first conductive material layer may beconformally formed on the substrate including the first grooves 93 c,the second grooves 93 w, the peripheral grooves 93 p, and the gategroove, a second conductive material layer filling the first grooves 93c, the second grooves 93 w, the peripheral grooves 93 p, and the gategroove may be formed on the first conductive material layer, planarizingthe first and second conductive material layers until the upperinterlayer insulating layer 90 is exposed. Therefore, first conductivestructures 96 c including a first conductive material layer 96 c_1 and asecond conductive material layer 96 c_2 remaining in the first grooves93 c may be formed, second conductive structures 96 w including a firstconductive material layer 96 w_1 and a second conductive material layer96 w_2 remaining in the second grooves 93 w may be formed, peripheralconductive structures 96 p including a first conductive material layer96 p_1 and a second conductive material layer 96 p_2 remaining in theperipheral grooves 93 p may be formed, and a gate conductive structure96 g including the first conductive material layer and the secondconductive material layer remaining in the gate groove may be formed.

The first conductive structures 96 c formed in the cell array area CRmay be electrically connected to the upper electrodes 81. The firstconductive structures 96 c may be bit lines of a memory device. Thefirst conductive structures 96 c may be formed in line shapes crossingthe word lines 12.

The second conductive structures 96 w may be electrically connected tothe word line contact structures 48 w. Therefore, the second conductivestructures 96 w may be electrically connected to the word lines 12through the word line contact structures 48 w.

The peripheral conductive structures 96 p may be electrically connectedto the peripheral contact structures 48 p, and the gate conductivestructure 96 g may be electrically connected to the gate contactstructure 48 g.

Hereinafter, a method of fabricating a semiconductor device according tosome example embodiments of inventive concepts will be described withreference to FIGS. 10A to 10C. In FIGS. 10A to 10C, a portion indicatedby “C1” shows a region taken along line I-I′ of FIG. 1, a portionindicated by “C2” shows a region taken along line II-II′ of FIG. 1, anda portion indicated by “P” shows a region taken along line III-III′ ofFIG. 1.

Referring to FIGS. 1 and 10A, a substrate fabricated by the methoddescribed in FIGS. 9A to 9S may be prepared. In some exampleembodiments, as described in FIG. 9I, the upper insulating layer 51 mayhave a vertical thickness smaller than that of the lower insulatinglayer 39. When the upper insulating layer 51 having the verticalthickness smaller than that of the lower insulating layer 39 is formed,first insulating patterns 54 c′, a second insulating pattern 54 w′, anda peripheral insulating pattern 54 p′ corresponding to the firstinsulating patterns 54 c, the second insulating pattern 54 w, and theperipheral insulating pattern 54 p described in FIG. 9J, may be formed.Each of the first insulating patterns 54 c′ may include a sequentiallystacked first upper insulating pattern 39 c′ and first upper insulatingpattern 51 c′. The second insulating pattern 54 w′ may include asequentially stacked second lower insulating pattern 39 w′ and secondupper insulating pattern 51 w′. The peripheral insulating pattern 54 p′may include a sequentially stacked peripheral lower insulating pattern39 p′ and peripheral upper insulating pattern 51′.

The first lower insulating pattern 39 c′, the second lower insulatingpattern 39 w′, and the peripheral lower insulating pattern 39 p′ mayhave a first vertical thickness T1 and the first upper insulatingpattern 51 c′, the second upper insulating pattern 51 w′, and theperipheral upper insulating pattern 51 p′ may have a second verticalthickness T2 smaller than the first vertical thickness T1.

Meanwhile, as described in FIG. 9O, the first insulating patterns 54 c′,the second insulating pattern 54 w′, and the peripheral insulatingpattern 54 p′, in which the vertical thicknesses are reduced by theplanarization process such as a CMP process for planarizing the firstseparation layer (see 69 of FIG. 9N) to form the first separationpatterns 39 a, may be formed. As described above, in the firstinsulating patterns 54 c′, the second insulating pattern 54 w′, and theperipheral insulating pattern 54 p′ having the reduced verticalthickness, the first upper insulating patterns 51 c′, the second upperinsulating pattern 51 w′, and the peripheral upper insulating pattern 51p′ may have a vertical thickness smaller than that of the first lowerinsulating patterns 39 c′, the second lower insulating pattern 39 w′,and the peripheral lower insulating pattern 39 p′.

Referring to FIGS. 1 and 10B, an upper interlayer insulating layer 190may be formed on the substrate including the first insulating patterns54 c′, the second insulating pattern 54 w′, the peripheral insulatingpattern 54 p′, and the data storage patterns 78. The upper interlayerinsulating layer 190 may be formed of silicon oxide or low-k dielectric.

First grooves 194 c, which penetrate the upper interlayer insulatinglayer 190 and expose the data storage patterns 78, second grooves 194 w,which penetrate the upper interlayer insulating layer 190 and the secondupper insulating pattern 51 w′ and expose the word line contactstructures 48 w, and peripheral grooves 194 p, which penetrate the upperinterlayer insulating layer 190 and the peripheral upper insulatingpattern 51 p′ and expose the peripheral contact structures 48 p, may beformed. Further, a gate groove, which penetrates the upper interlayerinsulating layer 190 and the peripheral upper insulating pattern 51 p′and exposes the gate contact structure 48 g, may be formed.

Since the second upper insulating pattern 51 w′ and the peripheral upperinsulating pattern 51 p′, which are penetrated by the second grooves 194w, the peripheral grooves 194 p, and the gate grooves, may have avertical thickness smaller than that of the second lower insulatingpattern 39 w′ and the peripheral lower insulating pattern 39 p′, aheight difference between bottoms of the second groove 194 w, theperipheral grooves 194 p, and the gate groove and bottoms of the firstgrooves 194 c can be minimized.

In some example embodiments, the first upper insulating pattern 51 c′,the second upper insulating pattern 51 w′, and the peripheral upperinsulating pattern 51 p′ may include a material having a different etchselectivity from the first and second spacers 60 and 66 a and the firstand second separation patterns 69 a and 72 surrounding sides of the datastorage patterns 78. For example, the first upper insulating pattern 51c′, the second upper insulating pattern 51 w′, and the peripheral upperinsulating pattern 51 p′ may be formed of silicon oxide, and the firstand second spacers 60 and 66 a and the first and second separationpatterns 69 a and 72 may be formed of silicon nitride. The upperinterlayer insulating layer 190 may include a material having adifferent etch selectivity from the first and second spacers 60 and 66 aand the first and second separation patterns 69 a and 72. For example,the upper interlayer insulating layer 190 may be formed of siliconoxide, and the first and second spacers 60 and 66 a and the first andsecond separation patterns 69 a and 72 may be formed of silicon nitride.Therefore, after the upper interlayer insulating layer 190 is patternedto form the first grooves 194 c, which penetrate the upper interlayerinsulating layer 190 and simultaneously form portions of the secondgrooves 194 w, peripheral grooves 194 p, and the gate groove, the secondupper insulating pattern 51 w′ and the peripheral upper insulatingpattern 51 p′ may be selectively etched to form the final second grooves194 w, the final peripheral grooves 194 p, and the final gate groove.

Referring to FIGS. 1 and 10C, first conductive structures 196 c, secondconductive structures 196 w, peripheral conductive structures 196 p, anda gate conductive structure 196 g may be formed in the first grooves 194c, the second grooves 194 w, the peripheral grooves 194 p, and the gategroove, respectively.

The forming the first conductive structures 196 c, the second conductivestructures 196 w, the peripheral conductive structures 196 p, and thegate conductive structure 196 g may include conformally forming a firstconductive material layer on the substrate including the first grooves194 c, the second grooves 194 w, the peripheral grooves 194 p, and thegate groove, forming a second conductive material layer to be filled inthe first grooves 194 c, the second grooves 194 w, the peripheralgrooves 194 p, and the gate groove on the first conductive materiallayer, and planarizing the first and second conductive material layersuntil the upper interlayer insulating layer 190 is exposed. Therefore,the first conductive structures 196 c including first conductivematerial layers 196 c_1 and second conductive material layers 196 c_2remaining within the first grooves 194 c may be formed, the secondconductive structures 196 w including first conductive material layers196 w_1 and second conductive material layers 196 w_2 remaining withinthe second grooves 194 w may be formed, the peripheral conductivestructures 196 p including first conductive material layers 196 p_1 andsecond conductive material layers 196 p_2 remaining within theperipheral grooves 194 p may be formed, and the gate conductivestructure 196 g including the first conductive material layer and thesecond conductive material layer remaining within the gate groove may beformed.

The first conductive structures 196 c may be upper electrodes and bitlines of a memory device. For example, each of the first conductivestructures 196 c may include the first conductive material layer 196 c_1which may be used as the upper electrode of the memory device, and thesecond conductive material layer 196 c_2 which may be used as the bitline of the memory device.

The second upper insulating pattern 51 w′ and the peripheral upperinsulating pattern 51 p′ may have a vertical thickness smaller than thatof the second lower insulating pattern 39 w′ and the peripheral lowerinsulating pattern 39 p′. Further, the first and second spacers 60 and66 a and the first and second separation patterns 69 a and 72surrounding sides of the data storage patterns 78 may include a materialhaving a different etch selectivity from the upper interlayer insulatinglayer 190, the second lower insulating pattern 39 w′ and the peripherallower insulating pattern 39 p′. Therefore, while forming the firstgrooves 194 c, the second grooves 194 w, the peripheral grooves 194 p,and the gate groove, etching of the first and second spacers 60 and 66 aand the first and second separation patterns 69 a and 72 surrounding thesides of the data storage patterns 78 can be prevented or minimized.Therefore, failure such as malfunction of the memory device which canoccur by narrowing the distance spaced between the first conductivepatterns 196 c and the lower electrode 63 c.

Next, a method of fabricating a semiconductor device according to someexample embodiments of inventive concepts will be described withreference to FIGS. 11A to 11I. In FIGS. 11A to 11I, a portion indicatedby “C1” shows a region taken along line I-I′ of FIG. 1, a portionindicated by “C2” shows a region taken along line II-II′ of FIG. 1, anda portion indicated by “P” shows a region taken along line III-III′ ofFIG. 1.

Referring to FIGS. 1 and 11A, a substrate fabricated by the methoddescribed with reference to FIGS. 9A to 9I may be prepared. Therefore,the substrate, in which the upper insulating layer 51 has been formed asdescribed in FIG. 9I, may be prepared. The upper insulating layer 51 andthe lower insulating layer 39 are patterned to form insulating patternswhich expose portions of the semiconductor pattern 24 and cover the wordline contact structures 48 w, the peripheral contact structures 48 p,and the gate contact structure 48 g. The insulating patterns may includefirst insulating patterns 254 c, a second insulating pattern 254 w, anda peripheral insulating pattern 254 p.

The first insulating patterns 254 c may be disposed between thesemiconductor patterns 24 in a cell array area CR and have portionsoverlapping portions of the semiconductor patterns 24. Each of the firstinsulating patterns 254 c may include a sequentially stacked first lowerinsulating pattern 239 c and first upper insulating pattern 251 c. Thefirst insulating patterns 254 c may have line shapes spaced apart fromeach other. Each of the first insulating patterns 254 c may have a widthD1 greater than a distance D3 spaced between the semiconductor patterns24 adjacent to each other. A distance D2 spaced between the firstinsulating patterns 254 c may be greater than the distance D3 spacedbetween the semiconductor patterns 24 adjacent to each other. The firstinsulating patterns 254 c may be disposed on the lower interlayerinsulating layer 18 between the semiconductor patterns 24 adjacent toeach other and may extend onto the semiconductor patterns 24 adjacent toeach other to partially cover the semiconductor patterns 24.

The second insulating pattern 254 w may be formed on the word linecontact structures 48 w. The second insulating pattern 254 w may includea sequentially stacked second lower insulating pattern 239 w and secondupper insulating pattern 251 w. The second lower insulating pattern 239w may be formed on sides of the word line contact structures 48 w, andthe second upper insulating pattern 251 w may cover upper surfaces ofthe word line contact structures 48 w and an upper surface of the secondlower insulating pattern 239 w.

The peripheral insulating pattern 254 p may be disposed in a peripheralcircuit area PR and formed on the peripheral contact structures 48 p andthe gate contact structure 48 g. The peripheral insulating pattern 254 pmay include a sequentially stacked peripheral lower insulating pattern239 p and peripheral upper insulating pattern 251 p. The peripherallower insulating pattern 239 p may be formed on sides of the peripheralcontact structures 48 p and a side of the gate contact structure 48 g.The peripheral upper insulating pattern 251 p may cover upper surfacesof the peripheral contact structures 48 p and an upper surface of thegate contact structure 48 g, and cover an upper surface of theperipheral lower insulating pattern 239 p.

Referring to FIGS. 1 and 11B, metal-semiconductor compounds 257 may beformed on the exposed portions of the semiconductor patterns 24. Aportion of an upper surface of each of the semiconductor patterns 24 maybe covered by each of the first insulating patterns 254 c, and theremaining portion of the upper surface may be exposed. Therefore, themetal-semiconductor compounds 257 may be formed on the exposed portionsof the upper surfaces of the semiconductor patterns 24. Themetal-semiconductor compounds 257 may be formed on the semiconductorpatterns 24 at both sides of the first insulating patterns 254 c.

The metal-semiconductor compounds 257 may have a plane area smaller thanthat of the upper surfaces of the semiconductor patterns 24. Themetal-semiconductor compounds 257 may have a width smaller than that ofthe semiconductor patterns 24.

Referring to FIGS. 1 and 11C, a conductive lower electrode layer 263 maybe conformally formed on the substrate including the metal-semiconductorcompounds 257. The insulating spacer layer 266 may be conformally formedon the lower electrode layer 263.

Referring to FIGS. 1 and 11D, the spacer layer 266 and the lowerelectrode layer 263 may be anisotropically etched to form spacers 263 aand lower electrode lines 266 a. The spacers 263 a and the lowerelectrode lines 266 a may be formed on the sides of the first insulatingpatterns 254 c. Each of the lower electrode lines 266 a may overlap aportion of each of the semiconductor patterns 24. Therefore, each of thesemiconductor patterns 24 may include a portion vertically overlappingeach of the lower electrode lines 266 a, and a second portion verticallyoverlapping each of the first insulating patterns 254 c.

Referring to FIGS. 1 and 11E, an insulating first separation layer maybe formed on the substrate including the spacers 263 a and the lowerelectrode lines 266 a and then planarized until the first and secondinsulating patterns 254 c and 254 w and the peripheral insulatingpatterns 254 p are exposed to form first separation patterns 269. Thefirst separation patterns 269 may be formed in line shapes. The firstseparation patterns 269 may be formed of an insulating material such assilicon oxide or silicon nitride. The process of forming the separationpatterns 269 may include planarizing the first separation layer using aplanarization process such as a CMP process.

While planarizing the first separation layer using the planarizationprocess such as a CMP process to form the first separation patterns 269,vertical thicknesses of the first insulating patterns 254 c, the secondinsulating patterns 254 w, and the peripheral insulating patterns 254 pcan be reduced by the planarization process. Each of the firstinsulating patterns 254 c may include a sequentially stacked first lowerinsulating pattern 239 c and thickness-reduced upper insulating pattern251 c, the second insulating pattern 254 w may include a sequentiallystacked second lower insulating pattern 239 w and thickness-reducedupper insulating pattern 251 w, and the peripheral insulating pattern254 p may include a sequentially stacked peripheral lower insulatingpattern 239 p and thickness-reduced peripheral upper insulating pattern251 p. For example, the vertical thickness (H2 of FIG. 11C) of the firstupper insulating patterns 251 c, the second upper insulating pattern 251w, and the peripheral upper insulating pattern 251 p formed before theplanarization process is performed, may be greater than a verticalthickness H2′ of the thickness-reduced first upper insulating patterns251 c, the thickness-reduced second upper insulating pattern 251 w, andthe thickness-reduced peripheral upper insulating pattern 251 p formedafter the planarization process is performed. A vertical thickness H1 ofthe first lower insulating patterns 239 c, the second lower insulatingpattern 239 w, and the peripheral lower insulating pattern 239 p afterthe planarization process, may be equal to the vertical thickness H1 ofthe first lower insulating patterns 239 c, the second lower insulatingpattern 239 w, and the peripheral lower insulating pattern 239 p beforethe planarization.

In some example embodiments, the vertical thickness H2′ of thethickness-reduced first upper insulating patterns 251 c, thethickness-reduced second upper insulating patterns 251 w, and thethickness-reduced peripheral upper insulating pattern 251 p may besmaller than the vertical thickness H1 of the first lower insulatingpatterns 239 c, the second lower insulating pattern 239 w, and theperipheral lower insulating pattern 239 p.

In another example embodiment, the thickness-reduced first upperinsulating patterns 251 c, the thickness-reduced second upper insulatingpatterns 251 w, and the thickness-reduced peripheral upper insulatingpattern 251 p may have a vertical thickness equal to or greater thanthat of the first lower insulating patterns 239 c, the second lowerinsulating pattern 239 w, and the peripheral lower insulating pattern239 p.

Referring to FIGS. 1 and 11F, trenches 270 for cutting the lowerelectrode lines 263 a may be formed. The lower electrode lines 263 b cutby the trenches 270 may be formed on the metal-semiconductor compounds257. The cut lower electrode lines 263 b may be referred to as lowerelectrode patterns.

The trenches 270 may be formed by patterning the lower electrode lines263 a and the spacers 266 a. While patterning the lower electrode lines263 a and the spacers 266 a, the first insulating patterns 254 c and thefirst separation patterns 269 may also be patterned. The trenches 270may be formed in line shapes spaced apart from each other. The trenches270 may be formed in the line spaces crossing the first insulatingpatterns 254 c. Therefore, a plurality of lower electrode patterns 263 bmay be spaced apart from each other between the trenches 270. The firstinsulating patterns 254 c, the spacers 266 a, and the first separationpatterns 269 may be formed from the line shape into an island shape bythe line-shaped trenches 270.

Second separation patterns 272 filling the trenches 270 may be formed.The second separation patterns 272 may be formed of an insulatingmaterial such as silicon oxide or silicon nitride. A plurality of lowerelectrode patterns 263 b may be disposed to be spaced apart from eachother between the second separation patterns 272 adjacent to each other.The first insulating patterns 254 c cut by the trenches 270, the spacers266 a, and the first separation patterns 269 may be disposed between thesecond separation patterns 272 adjacent to each other and between thelower electrode patterns 263 b adjacent to each other.

Referring to FIGS. 1 and 11G, as described in FIG. 9R, to lower theupper surfaces of the lower electrode patterns 263 b, the lowerelectrode patterns 263 b may be selectively partially etched to formlower electrodes 263 c. Subsequently, as described in FIG. 9S, datastorage patterns 278 may be formed in empty spaces or holes from whichthe lower electrode patterns 263 b are partially etched and removed.

Referring to FIGS. 1 and 11H, as described in FIG. 9T, conductive upperelectrodes 81 and insulating upper electrode capping patterns 84sequentially stacked on the substrate including the data storagepatterns 278 may be formed. The upper electrodes 81 and the upperelectrode capping patterns 84 may have line shapes crossing word lines12. As described in FIG. 9U, an etch stop layer 87 and an upperinterlayer insulating layer 90 may be formed on the substrate includingthe upper electrodes 81 and the upper electrode capping patterns 84.

First grooves 93 c, which sequentially penetrate the upper interlayerinsulating layer 90, the etch stop layer 87, and the upper electrodecapping patterns 84 and expose the upper electrodes 81, second grooves93 w, which sequentially penetrate the upper interlayer insulating layer90, the etch stop layer 87, and the second upper insulating pattern 51 wand expose the word line contact structures 48 w, and peripheral grooves93 p, which sequentially penetrate the upper interlayer insulating layer90, the etch stop layer 87, and the peripheral upper insulating pattern51 p and expose the peripheral contact structures 48 p, may be formed.Further, a gate groove, which sequentially penetrates the upperinterlayer insulating layer 90, the etch stop layer 87, and theperipheral upper insulating pattern 51 p and exposes the gate contactstructure 48 g, may be formed.

Referring to FIGS. 1 and 11I, as described in FIG. 9W, first conductivestructures 96 c may be formed in the first grooves 93 c, the secondconductive structures 96 w may be formed in the second grooves 93 w,peripheral conductive structures 96 p may be formed in the peripheralgrooves 93 p, and a gate conductive structure 96 g may be formed in thegate groove.

Hereinafter, a method of fabricating a semiconductor device according tosome example embodiments of inventive concepts will be described withreference to FIGS. 12A and 12B. In FIGS. 12A and 12B, a portionindicated by “C1” shows a region taken along line I-I′ of FIG. 1, aportion indicated by “C2” shows a region taken along line II-If of FIG.1, and a portion indicated by “P” shows a region taken along lineIII-III′ of FIG. 1.

Referring to FIGS. 1 and 12A, a substrate fabricated by the methoddescribed with reference to FIGS. 11A to 11G may be prepared. Asdescribed in FIG. 11E, in some example embodiments, the first upperinsulating patterns 251 c, the second upper insulating pattern 251 w,and the peripheral upper insulating pattern 251 p may have the verticalthickness smaller than that of the first lower insulating patterns 239c, the second lower insulating pattern 239 w, and the peripheral lowerinsulating pattern 239 p. Therefore, first insulating patterns 254 c′including sequentially first lower insulating patterns 239 c′ andvertical thickness-reduced first upper insulating patterns 251 c′, asecond insulating pattern 254 w′ including a sequentially stacked secondlower insulating pattern 239 w′ and vertical thickness-reduced secondupper insulating pattern 251 w′, and a peripheral insulating pattern 254p′ including a sequentially stacked peripheral lower insulating pattern239 p′ and vertical thickness-reduced peripheral upper insulatingpattern 251 p′ may be provided. The first lower insulating patterns 239c′, the second lower insulating pattern 239 w′, and the peripheral lowerinsulating pattern 239 p′ may have a first vertical thickness T1. Thefirst upper insulating patterns 251 c′, the second upper insulatingpattern 251 w′, and the peripheral upper insulating pattern 251 p′ mayhave a second vertical thickness T2 smaller than the first verticalthickness T1.

As described in FIG. 11G, an upper interlayer insulating layer 190 maybe formed on the substrate including the data storage patterns 278.First grooves 194 c, which sequentially penetrate the upper interlayerinsulating layer 190 and expose the data storage patterns 278, secondgrooves 194 w, which sequentially penetrate the upper interlayerinsulating layer 190 and the second upper insulating pattern 251 w′ andexpose the word line contact structures 48 w, and peripheral grooves 194p, which sequentially penetrate the upper interlayer insulating layer190 and the peripheral upper insulating pattern 251 p′ and expose theperipheral contact structures 48 p, may be formed. Further, a gategroove, which sequentially penetrates the upper interlayer insulatinglayer 190 and the peripheral upper insulating pattern 251 p′ and exposesthe gate contact structure 48 g, may be formed.

Referring to FIGS. 1 and 12B, a first conductive material layer may beconformally formed on the substrate including the first grooves 194 c,the second grooves 194 w, the peripheral grooves 194 p, and the gategroove on the first conductive material, and a second conductivematerial layer may be filled in the first grooves 194 c, the secondgrooves 194 w, the peripheral grooves 194 p, and the gate groove, andthe first and second conductive material layers may be planarized untilthe upper interlayer insulating layer 190 is exposed.

Therefore, the first conductive structures 296 c including firstconductive material layers 296 c_1 and second conductive material layers296 c_2 remaining within the first grooves 194 c may be formed, thesecond conductive structures 296 w including first conductive materiallayers 296 w_1 and second conductive material layers 296 w_2 remainingwithin the second grooves 194 w may be formed, the peripheral conductivestructures 296 p including first conductive material layers 296 p_1 andsecond conductive material layers 296 p_2 remaining within theperipheral grooves 194 p may be formed, and the gate conductivestructure 196 g including the first conductive material layer and thesecond conductive material layer remaining within the gate groove may beformed

According to some example embodiments of inventive concepts, asemiconductor device and a method of fabricating the same capable ofpreventing agglomerations of a metal-semiconductor compound such as asilicide, can be provided. Further, a method of forming themetal-semiconductor compound on a semiconductor pattern for a verticaldiode after forming a contact structure, can be provided to preventagglomerations of the metal-semiconductor compound.

According to some example embodiments of inventive concepts,productivity of the semiconductor device can be improved usinginsulating material patterns used for formation of the contact structureas one of molding patterns for formation of a lower electrode and a datastorage pattern of a memory device.

According to some example embodiments of inventive concepts, a processmargin of a semiconductor process to be performed later can becontrolled by adjusting the height of an upper surface of the contactstructure disposed at a higher level than an upper surface of thesemiconductor pattern.

FIG. 13 is a schematic diagram illustrating a memory card including asemiconductor device according to some example embodiments of inventiveconcepts.

Referring to FIG. 13, a memory card 300 includes a card substrate 310,at least one semiconductor device 330 disposed on the card substrate310, and contact terminals 320 formed parallel to each other in one edgeof the card substrate 310 and electrically connected to each of thesemiconductor devices 330. The semiconductor device 330 may be a memorychip or a memory package including the semiconductor device according toany one of the above-described example embodiments of inventiveconcepts. The memory card 300 may be used for an electronic device, suchas a digital camera, a computer, a portable storage device, and aportable communication apparatus.

The card substrate 310 may be a printed circuit board (PCB). Bothsurfaces of the card substrate 310 may be used. For example, thesemiconductor devices 330 may be disposed on a front surface and a rearsurface of the card substrate 310. The semiconductor devices 330disposed on the front surface and/or the rear surface of the cardsubstrate 310 may be mechanically and electrically connected to the cardsubstrate 310. The contact terminals 320 may be formed of metal and haveoxidation resistance. The contact terminals 320 may be variously setaccording to kind and standard specification of the memory card 300.Therefore, the number of illustrated contact terminals 320 may bedifferent depending on the kind of an electronic device.

FIG. 14 is a block diagram showing an electronic system including asemiconductor device according to some example embodiments of inventiveconcepts.

Referring to FIG. 14, an electronic device 400 may be provided. Theelectronic system 400 may include a processor 410, a memory 420, and aninput/output (I/O) device 430. The processor 410 may be electricallyconnected with the memory 420, and the input/output device 430 through abus 446.

The memory 420 may receive a control signal such as row address strobe(RAS*), write enable (WE*), and column address strobe (CAS*) from theprocessor 410. The memory 420 may store codes and data for an operationof the processor 410. The memory 420 may be used to store data accessedthrough the bus 446.

The memory 420 may include the semiconductor device according to any oneof the example embodiments of inventive concepts. An additional circuitand control signals for specific implementation and modification may beprovided.

The electronic device 400 may constitute various electronic controldevices requiring the memory 420. For example, the electronic device 400may be used for a computer system or a wireless communication apparatus,such as a personal digital assistant (PDA), a laptop computer, aportable computer, a web tablet, a wireless phone, a mobile phone, adigital music player, an MP3 player, a navigation, a solid state disk(SSD), a household appliance, or all devices which enable information tobe received/transmitted in wireless environments.

FIG. 15 is a block diagram illustrating a data storing device includinga semiconductor device according to some example embodiments ofinventive concepts.

Referring to FIG. 15, an electronic device may be a data storing devicesuch as a solid state disk (SSD) 511. The SSD 511 may include aninterface 513, a controller 515, a non-volatile memory 518, and a buffermemory 519. The non-volatile memory 518 may include any one of thesemiconductor devices according to some example embodiments of inventiveconcepts.

The SSD 511 may be a device storing data by using the semiconductordevice. The SSD 511 may be faster in speed, and with less mechanicaldelay or failure, heating, and noise as compared with a hard disk drive(HDD), and thereby formed small and light. The SSD 511 may be used in anotebook personal computer (PC), a desktop PC, an MP3 player, a portablecomputer, a web tablet, or a portable storage device

The controller 515 may be formed adjacent to and electrically connectedwith the interface 513. The controller 515 may be a microprocessorincluding a memory controller and a buffer controller. The non-volatilememory 518 may be formed adjacent to and electrically connected with thecontroller 515 via a connection terminal T. Data storage capacity of thedata storing device 511 may correspond to the non-volatile memory 518.The buffer memory 519 may be formed adjacent to and electricallyconnected with the controller 515.

The interface 513 may be connected with a host 502 and may serve as atransceiver of electric signals such as data. For example, the interface513 may be a device that uses a standard such as serial advancedtechnology attachment (SATA), integrated device electronics (IDE), smallcomputer system interface (SCSI), and/or combination thereof. Thenon-volatile memory 518 may be connected with the interface 513 via thecontroller 515.

The non-volatile memory 518 may serve as storage of data that isreceived through the interface 513. Although power to the SSD 511 may beinterrupted, the SSD 511 has a data retention characteristic in whichdata is stored in the non-volatile memory 518. The buffer memory 519 mayinclude a volatile memory. The volatile memory may be a dynamic randomaccess memory (DRAM) and/or a static random access memory (SRAM). Thebuffer memory 519 shows relatively fast operation speed as compared withthe non-volatile memory 518.

Data processing speed of the interface 513 may be relatively fastcompared with operation speed of the non-volatile memory 518. The buffermemory 519 may serve as temporary storage of data. Data received throughthe interface 513 may be temporarily stored in the buffer memory 519 viathe controller 515, and then may be permanently stored in thenon-volatile memory 518 corresponding to data writing speed of thenon-volatile memory 518. Also, frequently used data of the stored datain the non-volatile memory 518 may be previously read to temporarilystore in the buffer memory 519. For example, the buffer memory 519 mayincrease effective operation speed of the SSD 511 and reduce error rate.

FIG. 16 is a system block diagram of an electronic device including asemiconductor device according to some example embodiments of inventiveconcepts.

Referring to FIG. 16, the semiconductor device according to some exampleembodiments of inventive concepts may be applied to an electronic system600. The electronic system 600 may include a body 610, a microprocessorunit (MPU) 620, a power unit 630, a function 640, and a displaycontroller unit 650. The body 610 may be a motherboard including aprinted circuit board (PCB). The MPU 620, the power unit 630, thefunction unit 640, and the display controller unit 650 may be mounted onthe body 610. A display unit 660 may be disposed inside or outside thebody 610. For example, the display unit 660 may be disposed on thesurface of the body 610 and display an image processed by the displaycontroller unit 650.

The power unit 630 may receive a desired voltage from an externalbattery (not shown), divide the voltage into required voltage levels,and supply the divided voltages to the MPU 620, the function unit 640,and the display controller unit 650.

The MPU 620 may receive the voltage from the power unit 630 and controlthe function unit 640 and the display unit 660. The function unit 640may perform various functions of the electronic system 600. For example,when the electronic system 600 is a portable phone, the function unit640 may include several components capable of portable phone functions,such as the output of an image to the display unit 660 or the output ofa voice to a speaker, by dialing or communication with an externalapparatus 670. Also, when the electronic system 600 includes a camera,the electronic system 600 may serve as a camera image processor.

In some example embodiments, when the electronic system 600 is connectedto a memory card to increase capacity thereof, the function unit 640 maybe a memory card controller. The function unit 640 may transmit/receivesignals to/from the external apparatus 670 through a wired or wirelesscommunication unit 680. Further, when the electronic system 600 requiresa universal serial bus (USB) to expand functions thereof, the functionunit 640 may serve as an interface controller. The semiconductor devicesaccording to some example embodiments of inventive concepts may beapplied to at least one of the MPU 620 and the function unit 640.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible without materially departing from thenovel teachings and advantages. Accordingly, all such modifications areintended to be included within the scope of example embodiments ofinventive concepts as defined in the claims. In the claims,means-plus-function clauses are intended to cover the structuresdescribed herein as performing the recited function, and not onlystructural equivalents but also equivalent structures.

What is claimed is:
 1. A method of fabricating a semiconductor device,comprising: forming semiconductor patterns on a semiconductor substratesuch that sides of the semiconductor patterns are surrounded by a lowerinterlayer insulating layer; forming a lower insulating layer thatcovers the semiconductor patterns and the lower interlayer insulatinglayer; forming a contact structure that penetrates the lower insulatinglayer and the lower interlayer insulating layer and is spaced apart fromthe semiconductor patterns, an upper surface of the contact structurebeing higher than the semiconductor patterns; forming an upperinsulating layer that covers the contact structure and the lowerinsulating layer; patterning the upper and lower insulating layers toform insulating patterns that expose the semiconductor patterns andcover the contact structure, each of the insulating patterns including alower insulating pattern and an upper insulating pattern sequentiallystacked; and forming metal-semiconductor compounds on the exposedsemiconductor patterns after forming the insulating patterns.
 2. Themethod of claim 1, before forming the contact structure, furthercomprising: forming a contact hole, the contact hole penetrating thelower insulating layer and the lower interlayer insulating layer andexposing the semiconductor substrate; and forming an impurity region inthe semiconductor substrate exposed by the contact hole.
 3. The methodof claim 1, wherein the insulating patterns include first insulatingpatterns between the semiconductor patterns, and a second insulatingpattern on the contact structure, and a distance spaced between thefirst insulating patterns is greater than a distance spaced between thesemiconductor patterns.
 4. The method of claim 1, further comprising:forming lower electrodes on the metal-semiconductor compounds; andforming data storage patterns on the lower electrodes.
 5. The method ofclaim 4, further comprising: forming an upper interlayer insulatinglayer on the semiconductor substrate having the data storage patterns;forming a first groove and a second groove, the first groove penetratingthe upper interlayer insulating layer and having a portion overlappingone of the data storage patterns, and the second groove penetrating theupper interlayer insulating layer and the upper insulating pattern andhaving a portion overlapping the contact structure; and forming a firstconductive pattern in the first groove, and a second conductive patternin the second groove, wherein a lower surface of the second conductivepattern is at a level lower than lower surfaces of the first conductivepattern.
 6. The method of claim 5, wherein the first conductive patternis formed in a line shape.
 7. The method of claim 5, further comprising:forming upper electrodes on the data storage patterns before forming theupper interlayer insulating layer, wherein the upper electrodes areelectrically connected to the data storage patterns and the firstconductive pattern.
 8. A method of fabricating a semiconductor device,comprising: forming semiconductor patterns on a semiconductor substrate,such that sides of the semiconductor patterns surrounded by a lowerinterlayer insulating layer; forming a lower insulating layer thatcovers the semiconductor patterns and the lower interlayer insulatinglayer; forming a contact structure that penetrates the lower insulatinglayer and the lower interlayer insulating layer and is spaced apart fromthe semiconductor patterns; forming an upper insulating layer thatcovers the contact structure and the lower insulating layer; patterningthe upper and lower insulating layers to form insulating patterns thatexpose the semiconductor patterns and cover the contact structure, theinsulating patterns including a first insulating pattern between thesemiconductor patterns, and the insulating patterns including a secondinsulating pattern on the contact structure, the first insulatingpattern including a first lower insulating pattern and a first upperinsulating pattern sequentially stacked, and the second insulatingpattern including a second lower insulating pattern and a second upperinsulating pattern sequentially stacked; forming metal-semiconductorcompounds on the exposed semiconductor patterns after forming theinsulating patterns; forming lower electrodes on the metal-semiconductorcompounds; and forming data storage patterns on the lower electrodes. 9.The method of claim 8, wherein the second lower insulating pattern is onsides of the contact structure, and the second upper insulating patterncovers an upper surface of the contact structure and an upper surface ofthe second lower insulating pattern.
 10. The method of claim 8, furthercomprising: forming an upper interlayer insulating layer on thesemiconductor substrate having the data storage patterns; forming afirst groove that penetrates the upper interlayer insulating layer andhas a portion overlapping one of the data storage patterns, and a secondgroove that penetrates the upper interlayer insulating layer and thesecond upper insulating pattern and has a portion overlapping thecontact structure; and forming a first conductive pattern in the firstgroove, and a second conductive pattern in the second groove.
 11. Themethod of claim 10, further comprising: forming upper electrodes on thesemiconductor substrate having the data storage patterns before formingthe upper interlayer insulating layer, wherein the upper electrodes areelectrically connected to the data storage patterns and the firstconductive pattern.
 12. The method of claim 8, wherein forming the lowerelectrodes and the data storage patterns includes: forming first spacerson sides of the insulating patterns after forming themetal-semiconductor compounds; sequentially forming a lower electrodelayer and a spacer layer on the semiconductor substrate having the firstspacers; anisotropically etching the lower electrode layer and thespacer layer to form lower electrode lines and second spacers; formingan insulating first separation layer on the semiconductor substratehaving the lower electrode lines and the second spacers; planarizing thefirst separation layer to form a first separation pattern until thefirst and second insulating patterns are exposed; forming a trench forcutting the lower electrode lines to form lower electrode patterns onthe metal-semiconductor compounds; forming an insulating secondseparation pattern filling the trench; partially etching the lowerelectrode patterns to form empty spaces and to form the lowerelectrodes; and forming the data storage patterns in the empty spaces.13. The method of claim 8, wherein forming the lower electrodes and thedata storage patterns includes: sequentially forming a lower electrodelayer and a spacer layer on the semiconductor substrate including themetal-semiconductor compounds; anisotropically etching the lowerelectrode layer and the spacer layer to form lower electrode lines andspacers; forming an insulating first separation layer on thesemiconductor substrate having the lower electrode lines and thespacers; planarizing the first separation layer to form a firstseparation pattern until the first and second insulating patterns areexposed; forming a trench for cutting the lower electrode lines to formlower electrode patterns disposed on the metal-semiconductor compounds;forming an insulating second separation pattern filling the trench;partially etching the lower electrode patterns to form empty spaces andto form the lower electrodes; and forming the data storage patterns inthe empty spacers.
 14. The method of claim 8, wherein a portion of anupper surface of each of the semiconductor patterns is covered with thefirst insulating pattern, and a remaining portion thereof is coveredwith a corresponding metal-semiconductor compound.
 15. The method ofclaim 8, wherein the first and second upper insulating patterns have avertical thickness smaller than that of the first and second lowerinsulating patterns.